Abstract
Ellipsometry dates back to the middle of the last century [1, 2], and it has been used since then for the determination of the optical properties of metals, semiconductors and insulators [3]. Ellipsometry is nowadays quite intensively employed in semiconductor characterisation and has the potential for in situ diagnostics of surfaces. The principle of ellipsometry is based on the fact that the status of light polarisation is changed when light is reflected from a surface. This change can be related to the dielectric function of the reflecting material, as discussed in Sect. 1.3.
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Rossow, U. (1995). Spectroscopic Ellipsometry. In: McGlip, J.F., Weaire, D., Patterson, C.H. (eds) Epioptics. Esprit Basic Research Series. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-79820-7_3
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