Raman Spectroscopy

Abstract

For the analysis of semiconductor layers, heterostructures and interfaces, Raman spectroscopy has become a widely used method. Among the main reasons for its wide-spread application is its sensitivity for thin films down to mono-layer (ML) thickness, combined with its variable information depth. It allows a nondestructive analysis of the surface regions within some nm below the surface as well as deeper regions up to the µm range, e.g. buried interfaces. As a consequence of the recent evolution of the experimental equipment, nowadays Raman experiments can be performed very efficiently, especially due to the employment of multichannel detector systems. Besides, lateral resolution in the micrometer range can be achieved in so-called micro-Raman spectroscopy. This development has opened the field of laterally structured heterostructure systems and devices for Raman analysis.