Abstract
In the past, crystal growth and crystal characterisation were different topics performed in different laboratories by scientists from different disciplines. With the advent of epitaxial layer growth by Molecular Beam Epitaxy (MBE), Vapour Phase Epitaxy (VPE) and Liquid Phase Epitaxy (LPE) the two areas moved closer together since microscopic knowledge about the growth process turned out to be necessary in order to understand and to control the growth in a reproducible manner.
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© 1996 Springer-Verlag Berlin Heidelberg
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Richter, W., Zahn, D. (1996). Analysis of Epitaxial Growth. In: Bauer, G., Richter, W. (eds) Optical Characterization of Epitaxial Semiconductor Layers. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-79678-4_2
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DOI: https://doi.org/10.1007/978-3-642-79678-4_2
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-79680-7
Online ISBN: 978-3-642-79678-4
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