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Simulation of Thermally Shunted Multiple-Emitter-Finger AlGaAs/GaAs Heterojunction Bipolar Transistors Using A Finite Element Code

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Book cover Computational Mechanics ’95

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Abstract

Heterojunction bipolar transistors (HBTs) are capable of microwave operation at high current densities and are being implemented in microwave high power amplifiers. The heat generated during device operation is dissipated through the GaAs substrate. Because of its poor thermal conductivity, the junction temperature rise can be large enough to significantly degrade the high performance of the device. The operation of AlGaAs/GaAs is usually thermally-limited.

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References

  1. W. Liu, S. Nelson, D. G. Hill and A. Khatibzadeh, “Current collapse in Microwave Multifinger Heterojunction Bipolar Transistors Operated at Very High Power Densities,” IEEE Trans. on Electron Devices, vol. 40, pp. 1917–1927 (1993).

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  2. L. L. Liou and B. Bayraktaroglu, “Thermal Stability Analysis of AlGaAs/GaAs Heteroj unction Bipolar Transistors with Multiple Emitter Fingers,” IEEE trans. on Electron Devices, vol. 41 pp 629–636, (1994).

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  4. L. L. Liou, B. Bayraktaroglu, C. I. Huang and J. Barrette, “The Effect of Thermal Shunt on the Current Instability of Multiple-Emitter-Finger Heterojunction Bipolar Transistors,” IEEE 1993, BCTM proceedings, pp. 253–256, (1993).

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Author information

Authors and Affiliations

  1. Florida Atlantic University, Boca Raton, USA

    S. Kokkalera & C. T. Tsai

  2. Wright Laboratory, Solid State Electronics Directorate, WPAFB, Ohio, USA

    L. L. Liou, J. Barrette, C. Bozada, R. Dettmer, B. Fitch, M. Mack & J. Sewell

Authors
  1. S. Kokkalera
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  2. C. T. Tsai
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  3. L. L. Liou
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  4. J. Barrette
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  5. C. Bozada
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  6. R. Dettmer
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  7. B. Fitch
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  8. M. Mack
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  9. J. Sewell
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Editor information

Editors and Affiliations

  1. Computational Modeling Center, Georgia Institute of Technology, Atlanta, GA, 30332-0356, USA

    S. N. Atluri

  2. Department of Quantum Engineering & Systems Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

    G. Yagawa

  3. Department of Mechanical Engineering, Vanderbilt University, P.O. Box 1592, Station B, Nashville, TN, 37235, USA

    Thomas Cruse

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© 1995 Springer-Verlag Berlin Heidelberg

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Kokkalera, S. et al. (1995). Simulation of Thermally Shunted Multiple-Emitter-Finger AlGaAs/GaAs Heterojunction Bipolar Transistors Using A Finite Element Code. In: Atluri, S.N., Yagawa, G., Cruse, T. (eds) Computational Mechanics ’95. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-79654-8_100

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  • DOI: https://doi.org/10.1007/978-3-642-79654-8_100

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-79656-2

  • Online ISBN: 978-3-642-79654-8

  • eBook Packages: Springer Book Archive

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