Simulation of Thermally Shunted Multiple-Emitter-Finger AlGaAs/GaAs Heterojunction Bipolar Transistors Using A Finite Element Code
Heterojunction bipolar transistors (HBTs) are capable of microwave operation at high current densities and are being implemented in microwave high power amplifiers. The heat generated during device operation is dissipated through the GaAs substrate. Because of its poor thermal conductivity, the junction temperature rise can be large enough to significantly degrade the high performance of the device. The operation of AlGaAs/GaAs is usually thermally-limited.
KeywordsMicrowave GaAs Poly Imide Imide Arsenide
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- L. L. Liou, B. Bayraktaroglu, C. I. Huang and J. Barrette, “The Effect of Thermal Shunt on the Current Instability of Multiple-Emitter-Finger Heterojunction Bipolar Transistors,” IEEE 1993, BCTM proceedings, pp. 253–256, (1993).Google Scholar