Semiconductor-Laser Devices — Fabrication and Characteristics

  • Kenichi Iga
  • Susumu Kinoshita
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 30)

Abstract

In this chapter, we examine the fabrication of actual laser devices and the relevant characterization techniques. The design criteria stated in Chap. 3 should be checked as the first step of device evaluation. Measurement of fundamental laser parameters such as voltage/current curves, threshold current density and spectral characteristics describe the important material properties of grown wafers. The measurement results also provide useful feedback for subsequent epitaxial growths.

Keywords

Recombination GaAs Auger Librium Verse 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1996

Authors and Affiliations

  • Kenichi Iga
    • 1
  • Susumu Kinoshita
    • 1
  1. 1.Precision and Intelligence LaboratoryTokyo Institute of TechnologyMidori-ku, Yokohama 226Japan

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