Semiconductor-Laser Devices — Fabrication and Characteristics
In this chapter, we examine the fabrication of actual laser devices and the relevant characterization techniques. The design criteria stated in Chap. 3 should be checked as the first step of device evaluation. Measurement of fundamental laser parameters such as voltage/current curves, threshold current density and spectral characteristics describe the important material properties of grown wafers. The measurement results also provide useful feedback for subsequent epitaxial growths.
KeywordsRecombination GaAs Auger Librium Verse
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