Abstract
A large variety of spatiotemporal current-density patterns can be observed in silicon p+-n+-p-n− diodes by varying only one external parameter. We present experimental and numerical results concerning diverse bifurcation sequences associated with the dynamics of localized dissipative high currrent-density domains, so-called filaments. In particular, we discuss (i) the transition from a spatially uniform to a stable stationary filament, (ii) the bifurcation from a stable stationary to a rocking filament, characterized by a periodic oscillation of the filament around a fixed position in space, (iii) a period-doubling sequence of rocking filaments to chaotic filament motions, (iv) properties of travelling current filaments, and (v) interaction processes of filaments with the semiconductor boundary. It is shown that the different kinds of motion of the localized structures in the devices under consideration are strongly correlated to oscillations of global system variables, e. g., the total current flowing through the device, and, consequently, a determination of the filament motion is possible by investigating only global variables. — The theoretical modelling of the device under consideration is based on a simplified two-layer-model which leads to a two-component reaction-diffusion system of activator-inhibitor type. Numerical calculations reveal that the simple model reproduces all bifurcation sequences observed experimentally.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
A.M. Barnett: In Semiconductors and Semimetals, Vol. 6, ed. by R.K. Willard-son, A.C. Beer ( Academic Press, New York 1970 ) pp. 141–200
V.L. Bonch-Bruevich, I. Zvyagin, A.G. Mironov: Domain Electrical Instabilities in Semiconductors ( Consultant Bureau, New York 1975 )
J. Pozhela: Plasma and Current Instabilities in Semiconductors ( Pergamon Press, Oxford 1981 )
E. Schöll: Nonequilibrium Phase Transitions in Semiconductors (Springer, Berlin, Heidelberg 1987 )
Y. Abe (ed.): Nonlinear and Chaotic Transport in Semiconductors, Appl. Phys. A, Vol. 48 ( Springer, Heidelberg 1989 )
M.P. Shaw, V.V. Mitin, E. Schöll, H.L. Grubin: The Physics of Instabilities in Solid State Electron Devices ( Plenum Press, New York 1992 )
N. Balkan, B.K. Ridley, A.J. Vickers (eds.): Negative Differential Resistance and Instabilities in 2-D Semiconductors ( Plenum Publishing, New York 1993 )
B.S. Kerner, V.V. Osipov: Autosolitons ( Kluwer, Dordrecht 1994 )
D. Jäger, H. Baumann, R. Symanczyk: Phys. Lett. A 117, 141 (1986)
F.-J. Niedernostheide, M. Arps, R. Dohmen, H. Willebrand, H.-G. Purwins: Phys. Stat. Sol. (b), 172 (1992)
F.-J. Niedernostheide, R. Dohmen, H. Willebrand, H.-J. Schulze, H.-G. Pur-wins: In Nonlinearity with Disorder, ed. by F. Abdullaev, A.R. Bishop, S. Pnevmatikos, Springer Proceedings in Physics Vol. 67 (Springer, Berlin, Heidelberg 1992 ) pp. 282–309
V.A. Vashchenko, B.S. Kerner, V.V. Osipov, V.F. Sinkevich: Fiz. Tekh. Poluprovodn. 24, 1705 (1990)
V.A. Vashchenko, B.S. Kerner, V.V. Osipov, V.F. Sinkevich: Soy. Phys. Semicond. 24, 1065 (1990)
V.V. Gafiichuk, B.I. Datsko, B.S. Kerner, V.V. Osipov: Fiz. Tekh. Poluprovodn. 24, 724 (1990)
V.V. Gafiichuk, B.I. Datsko, B.S. Kerner, V.V. Osipov: Sov. Phys. Semicond. 24, 455 (1990)
A.M. Barnett, A.G. Milnes: J. Appt. Phys. 37, 4215 (1966)
B.S. Kerner, B.P. Litvin, V.I. Sankin: Pis’ma Zh. Tekh. Fiz. 13, 819 (1987)
B.S. Kerner, B.P. Litvin, V.I. Sankin: Sov. Tech. Phys. Lett. 13, 342 (1987)
Y.A. Astrov: Fiz. Tekh. Poluprovodn. 27, 1973 (1993)
Y.A. Astrov: Semiconductors 27, 1084 (1993)
Y.A. Astrov, S.A. Khorev: Fiz. Tekh. Poluprovodn. 27, 2027 (1993)
Y.A. Astrov, S.A. Khorev: Semiconductors 27, 1113 (1993)
R.M. Scarlett, W. Shockley: IEEE Int. Cony. Rec. 3, 3 (1963)
B.S. Kerner, V.V. Osipov: Mikroélektronika 6, 337 (1977)
B.S. Kerner, V.V. Osipov: Soviet Microelectronics 6, 256 (1977)
A.V. Gorbatyuk, I.A. Linüchuk, A.V. Svirin: Pis’ma Zh. Tekh. Fiz. 15, 42 (1989) [Engl. transi.: Sov. Tech. Phys. Lett. 15, 224 (1989)]
A.V. Gorbatyuk, P.B. Rodin: Pis’ma Zh. Tekh. Fiz. 16, 89 (1990)
A.V. Gorbatyuk, P.B. Rodin: Sov. Tech. Phys. Lett. 16, 519 (1990)
A.V. Gorbatyuk, P.B. Rodin: Proc. 6th Int’l Symposium on Power Semiconductor Devices E4 IC’s (Davos 1994) paper 6. 2
A. Turing: Philos. Trans. R. Soc. 237, 37 (1952)
R. Symanczyk, S. Gaelings, D. Jäger: Phys. Lett. A 160, 397 (1991)
] R. Symanczyk: this volume, chapter 9
A. Wacker, E. Schöll: Semicond. Sci. Technol. 7, 1456 (1992)
A. Wacker, E. Schöll: Z. Phys. B 93, 431 (1994)
S. Bose, A. Wacker, E. Schöll: Phys. Lett. A (1994) in print
] E. Schöll, A. Wacker: this volume, chapter 2
U. Rau, W. Clauß, A. Kittel, M. Lehr, M. Bayerbach, J. Parisi, J. Peinke, R.P. Hübener: Phys. Rev. B 43, 2255 (1991)
A. Brandi, W. Prettl: In Festkörperprobleme (Advances in Solid State Physics), Vol. 30, ed. by U. Rössler ( Vieweg, Braunschweig 1990 ) pp. 371–385
K. Penner: Journal de Physique Colloque C4, 797 (1988)
F.-J. Niedernostheide, B.S. Kerner, H.-G. Purwins: Phys. Rev. B 46, 7559 (1992)
F.-J. Niedernostheide, M. Ardes, M. Or-Guil, H.-G. Purwins: Phys. Rev. B 49, 7379 (1994)
A. Wierschem, F.-J. Niedernostheide, A. Gorbatyuk, H.-G. Purwins: Scanning 17 (1) (1995)
F.-J. Niedernostheide, M. Kreimer, H.-J. Schulze, H.-G. Purwins: Phys. Lett. A 180, 113 (1993)
F.-J. Niedernostheide, M. Kreimer, B. Kukuk, H.-J. Schulze, H.-G. Purwins: Phys. Lett. A 191, 285 (1994)
M.H. Jensen, P. Bak, T. Bohr: Phys. Rev. A 30, 1960 (1984)
T. Bohr, P. Bak, M.H. Jensen: Phys. Rev. A 30, 1970 (1984)
E.G. Gwinn, R.M. Westervelt: Phys. Rev. Lett. 57, 1060 (1986)
R.M. Westervelt, S.W. Teitsworth: Physica 23D, 186 (1986)
J. Peinke, J. Parisi, O.E. Rössler, R. Stoop: Encounter with Chaos (Springer, Berlin, Heidelberg 1992 )
A.M. Kahn, D.J. Mar, R.M. Westervelt: Phys. Rev. Lett. 68, 369 (1992)
A.M. Kahn, D.J. Mar, R.M. Westervelt: Phys. Rev. B 46, 7469 (1992)
C. Brillert, F.-J. Niedernostheide, H.-G. Purwins: unpublished (1994)
U. Middya, M.D. Graham, D. Luss, M. Sheintuch: J. Chem. Phys. 98, 2823 (1993)
U. Middya, M. Sheintuch, M.D. Graham, D. Luss: Physica D 63, 393 (1993)
F.-J. Niedernostheide, R. Dohmen, H. Willebrand, B.S. Kerner, H.-G. Purwins: Physica D 69, 425 (1993)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1995 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Niedernostheide, FJ. (1995). Spatiotemporal Patterns and Generic Bifurcations in a Semiconductor Device. In: Niedernostheide, FJ. (eds) Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices. Springer Proceedings in Physics, vol 79. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-79506-0_8
Download citation
DOI: https://doi.org/10.1007/978-3-642-79506-0_8
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-79508-4
Online ISBN: 978-3-642-79506-0
eBook Packages: Springer Book Archive