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The Quantum Hall Effects pp 32–38Cite as

Fractional Quantum Hall Effect: Introduction

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 85))

Abstract

The FQHE was realized in high-mobility 2DEG in GaAs/Al x Ga1-x As heterostructures [4.1–6] and in high-mobility Si-MOSFETs [4.7]. It is characterized by the fact that the Hall conductance has plateaus quantized to certain simple fractions v of the unit e 2 / h and at the same places, the longitudinal resistivity shows an almost dissipationless current flow.

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Author information

Authors and Affiliations

  1. Institute of Mathematical Sciences, 600 113, Taramani, Madras, India

    Professor Tapash Chakraborty

  2. Dept. of Theoretical Physics, University of Oulu, FIN 90570, Linnanmaa, Oulu, Finland

    Dr. Pekka Pietiläinen

Authors
  1. Professor Tapash Chakraborty
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  2. Dr. Pekka Pietiläinen
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© 1995 Springer-Verlag Berlin Heidelberg

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Chakraborty, T., Pietiläinen, P. (1995). Fractional Quantum Hall Effect: Introduction. In: The Quantum Hall Effects. Springer Series in Solid-State Sciences, vol 85. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-79319-6_4

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  • DOI: https://doi.org/10.1007/978-3-642-79319-6_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-58515-2

  • Online ISBN: 978-3-642-79319-6

  • eBook Packages: Springer Book Archive

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