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Site-Specific Processes During MBE and MOMBE Growth of III–V Compounds on Singular and Vicinal Surfaces

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Book cover Nanostructures and Quantum Effects

Part of the book series: Springer Series in ((SSMATERIALS,volume 31))

Abstract

This paper discusses three ways in which specific sites on a substrate can influence either the reactivity of precursor species or the subsequent growth morphology of III-V semiconductor films during molecular beam epitaxy. Different step structures on vicinal surface have a strong influence on the growth mode transition from two-dimensional nucleation to step propagation, but it is shown that steps are not perfect sinks for adatoms. The choice of organometallic precursors can affect site-specific reaction pathways, but incorporation and detachment processes at step edges may still be dominant in determining morphology. Different substrate orientations have a profound effect on precursor reactivity and on morphology, especially in the growth of mismatched systems.

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Authors and Affiliations

  1. The Blackett Laboratory, Imperial College of Science, Technology and Medicine, Interdisplinary Research Centre for Semiconductor Materials, Prince Consort Road, London, SW7 2BZ, UK

    B. A. Joyce, T. Shitara, J. H. Neave, R. N. Fawcett & T. Kaneko

Authors
  1. B. A. Joyce
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  2. T. Shitara
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  3. J. H. Neave
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  4. R. N. Fawcett
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  5. T. Kaneko
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© 1994 Springer-Verlag Berlin Heidelberg

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Joyce, B.A., Shitara, T., Neave, J.H., Fawcett, R.N., Kaneko, T. (1994). Site-Specific Processes During MBE and MOMBE Growth of III–V Compounds on Singular and Vicinal Surfaces. In: Nanostructures and Quantum Effects. Springer Series in Materials Science , vol 31. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-79232-8_38

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  • DOI: https://doi.org/10.1007/978-3-642-79232-8_38

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-79234-2

  • Online ISBN: 978-3-642-79232-8

  • eBook Packages: Springer Book Archive

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