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Optical Properties of Self-Organizing Quantum-Dot Structures

  • S. Fafard
  • J. L. Merz
  • D. Leonard
  • P. M. Petroff
Conference paper
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 31)

Abstract

We present experimental evidence that directly demonstrates the discrete nature of the density-of-states (broadened delta functions) in InGaAs ultrasmall quantum dots (diameter as small as 13 nm) epitaxially grown on GaAs by the coherent islanding effect. From the photoluminescence and the photoluminescence excitation spectra, we deduce an interlevel spacing of ~30 meV between the ground state and the first excited state arising from the lateral confinement, for quantum dots having a diameter of ~20 nm.

Keywords

Quantum Well Heavy Hole Reflection High Energy Electron Diffraction Thermal Quenching Lateral Confinement 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1994

Authors and Affiliations

  • S. Fafard
    • 1
  • J. L. Merz
    • 1
  • D. Leonard
    • 1
  • P. M. Petroff
    • 1
  1. 1.Center for Quantized Electronic Structures (QUEST)University of CaliforniaSanta BarbaraUSA

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