Fabrication of Quantum-Wire Structures by Atomic-Layer Epitaxy and VPE Processes

  • A. Usui
  • H. Sunakawa
  • A. A. Yamaguchi
  • H. Sakaki
Conference paper
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 31)

Abstract

Growth-oriented process for fabricating quantum wire structure is presented, which can avoid complicated nano-scale lithography process and reduce process-induced defects. Chloride ALE, hydride VPE and in-situ selective gas etching are used here as main tools. The fabrication of T-shaped quantum wire structures is demonstrated.

Keywords

Quartz GaAs Hydride Trench AsH3 

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References

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    J. Nishizawa, H. Abe, and T. Kurabayashi, J. Electrochem.Soc.132,l197(1985).Google Scholar
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    L. Pfeiffer, W. Wegscheider,A. Pinczuk, and K. West, Abstracts on JRDC International Symposium on Nanostructures & Quantum Effects 1993, Tsukuba, pl6.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1994

Authors and Affiliations

  • A. Usui
    • 1
  • H. Sunakawa
    • 1
  • A. A. Yamaguchi
    • 1
  • H. Sakaki
    • 2
  1. 1.Fundamental Research LaboratoriesNEC CorporationTsukuba, Ibaraki 305Japan
  2. 2.RCASTUniversity of TokyoMeguro-ku, Tokyo 153Japan

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