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Fabrication of Quantum-Wire Structures by Atomic-Layer Epitaxy and VPE Processes

  • A. Usui
  • H. Sunakawa
  • A. A. Yamaguchi
  • H. Sakaki
Conference paper
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 31)

Abstract

Growth-oriented process for fabricating quantum wire structure is presented, which can avoid complicated nano-scale lithography process and reduce process-induced defects. Chloride ALE, hydride VPE and in-situ selective gas etching are used here as main tools. The fabrication of T-shaped quantum wire structures is demonstrated.

Keywords

Atomic Layer Epitaxy XTEM Image Horizontal White Line Thin GaAs Layer Etched Sidewall 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    J. Nishizawa, H. Abe, and T. Kurabayashi, J. Electrochem.Soc.132,l197(1985).Google Scholar
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    A. Usui and H. Sunakawa,Jpn.J.Appl.Phys.25,L212(1985).CrossRefGoogle Scholar
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    Y-C. Chang, L.L. Chang, and L. Esaki, Appl.Phys.Lett.47,1324(1985).CrossRefGoogle Scholar
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    L. Pfeiffer, W. Wegscheider,A. Pinczuk, and K. West, Abstracts on JRDC International Symposium on Nanostructures & Quantum Effects 1993, Tsukuba, pl6.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1994

Authors and Affiliations

  • A. Usui
    • 1
  • H. Sunakawa
    • 1
  • A. A. Yamaguchi
    • 1
  • H. Sakaki
    • 2
  1. 1.Fundamental Research LaboratoriesNEC CorporationTsukuba, Ibaraki 305Japan
  2. 2.RCASTUniversity of TokyoMeguro-ku, Tokyo 153Japan

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