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Nanostructures and Quantum Effects pp 181–184Cite as

Fabrication of N-AlGaAs/GaAs Edge Quantum Wires on (118)B Facets with Gate-Electrode and Density Modulation of One-Dimensional Electrons

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Part of the book series: Springer Series in ((SSMATERIALS,volume 31))

Abstract

An N-AlGaAs/GaAs edge quantum wire (EQWI) structure with an effective width of 80–90 nm has been successfully prepared on a patterned substrate by an ensemble of several unique techniques in molecular beam epitaxy (MBE). The magnetic depopulation of one-dimensional (1D) subbands was clearly observed, indicating presence of the lateral quantum confinement by heterointerfaces. In addition, a gate electrode was successfully formed on the EQWI, resulting in a modulation of such 1D electron density.

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Authors and Affiliations

  1. Quantum Wave Project, JRDC, 4-7-6 Komaba, Meguro-ku, Tokyo 153, Japan PG

    Y. Nakamura, M. Tsuchiya, J. Motohisa, H. Noge, S. Koshiba & H. Sakaki

  2. RCAST, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan

    Y. Nakamura, M. Tsuchiya, J. Motohisa, H. Noge, S. Koshiba & H. Sakaki

Authors
  1. Y. Nakamura
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  2. M. Tsuchiya
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  3. J. Motohisa
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  4. H. Noge
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  5. S. Koshiba
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  6. H. Sakaki
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© 1994 Springer-Verlag Berlin Heidelberg

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Nakamura, Y., Tsuchiya, M., Motohisa, J., Noge, H., Koshiba, S., Sakaki, H. (1994). Fabrication of N-AlGaAs/GaAs Edge Quantum Wires on (118)B Facets with Gate-Electrode and Density Modulation of One-Dimensional Electrons. In: Nanostructures and Quantum Effects. Springer Series in Materials Science , vol 31. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-79232-8_25

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  • DOI: https://doi.org/10.1007/978-3-642-79232-8_25

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-79234-2

  • Online ISBN: 978-3-642-79232-8

  • eBook Packages: Springer Book Archive

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