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Photon-Assisted Tunneling Through a Quantum Dot: Theory and Experiment

  • L. P. Kouwenhoven
  • S. Jauhar
  • K. McCormick
  • D. Dixon
  • P. L. McEuen
  • Yu. V. Nazarov
  • N. C. van der Vaart
  • C. T. Foxon
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 31)

Abstract

We have studied the effect of microwaves on Coulomb blockade devices, both theoretically and experimentally. Our model extends the Tien-Gordon theory for photon-assisted tunneling to encompass the correlated tunneling of electrons through small capacitance double-junction devices. The main theoretical results for a double-junction system are (1) the prediction of sharp current jumps reflecting the discrete photon energy hf in current-gate voltage characteristics and (2) the prediction of a zero-bias current whose sign changes when an electron is added to the island between the junctions. Preliminary measurements are presented on split-gate quantum dots with 19 GHz microwaves applied to one of the control gates. The observed photoresponse is in good agreement with the predictions of the model.

Keywords

Gate Voltage Tunnel Junction Tunnel Rate Current Jump Coulomb Oscillation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    A.H. Dayem, and RJ. Martin, Phys. Rev. Lett. 8, 246 (1962).CrossRefGoogle Scholar
  2. [2]
    P.K. Tien, and J.R. Gordon, Phys. Rev. 129, 647 (1963).CrossRefGoogle Scholar
  3. [3]
    D.V. Averin, and K.K. Likharev, in Mesoscopic Phenomena in Solids, edited by B.L. Altshuler et al. (Elsevier, Amsterdam, 1991);Google Scholar
  4. [3a]
    G.-L. Ingold, and Yu.V. Nazarov, in Single Charge Tunneling, edited by H. Grabert, and M.H. Devoret (Plenum, New York, 1992).Google Scholar
  5. [4]
    K. Flensberg, S.M. Girvin, M. Jonson, D.R. Penn, and M.D. Stiles, Physica Scripta T42, 189 (1992).CrossRefGoogle Scholar
  6. [5]
    K.K. Likharev, and I.A. Devyatov, Proc. of LT20, to be published in Physica B.Google Scholar
  7. [6]
    A. Hadicke, and W. Krech, to be published.Google Scholar
  8. [7]
    C. Bruder and H. Schoeller, to be published. In this theoretical paper the dot is modelled as a two-level system for the single particle density of states. For this case the I-V sd characteristics contain discrete photon steps near the onset of a single particle level.Google Scholar
  9. [8]
    F. Hekking, and Yu. V. Nazarov, Phys. Rev. В 44, 9110 (1991).CrossRefGoogle Scholar
  10. [9]
    See for a recent collection of quantum dot papers a special issue of Physica В on The Physics of Few-Electron Nanostructures, edited by L.J. Geerligs, C.J.P.M. Harmans, and L.P. Kouwenhoven, Physica В 189 (1993).Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1994

Authors and Affiliations

  • L. P. Kouwenhoven
    • 1
  • S. Jauhar
    • 1
  • K. McCormick
    • 1
  • D. Dixon
    • 1
  • P. L. McEuen
    • 1
  • Yu. V. Nazarov
    • 2
  • N. C. van der Vaart
    • 2
  • C. T. Foxon
    • 3
  1. 1.Department of Physics, Materials Science Division, Lawrence Berkeley LaboratoriesUniversity of California at BerkeleyBerkeleyUSA
  2. 2.Department of Applied PhysicsDelft University of TechnologyDelftThe Netherlands
  3. 3.Philips Research LaboratoriesRedhill, SurreyUK

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