Abstract
Semiconductor (GaAlAs) diode lasers have been used to probe the 3s5S2° → 3p 5 P 3 (7772 Å) excited state transition of atomic oxygen in a pressure-driven shock tube. Lineshape analyses of the measured spectral profiles enable the simultaneous and independent determination of kinetic and population temperatures. Measurements were made in the reflected-shock region with an initial gas mixture of 1.5% O2 and 98.5% Ar. The experimentally determined temperatures ranged from 6900 to 11400 K, and the pressure range was 0.27 – 1.37 atm. The measured kinetic and population temperatures were found to be in good agreement with each other.
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© 1995 Springer-Verlag Berlin Heidelberg
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Chang, H.A., Baer, D.S., Hanson, R.K. (1995). Semiconductor Laser Diagnostics of Kinetic and Population Temperatures in High-Enthalpy Flows. In: Brun, R., Dumitrescu, L.Z. (eds) Shock Waves @ Marseille II. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-78832-1_5
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DOI: https://doi.org/10.1007/978-3-642-78832-1_5
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-78834-5
Online ISBN: 978-3-642-78832-1
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