Abstract
We have studied Pt overlayers on a thermodynamically stable oxide surface between submono- and multilayer coverages for different oxygen stoichiometrics. The latter were adjusted by different reducing and oxidizing conditions in the gas phase. Surface spectroscopic techniques and current-voltage measurements have been used to determine the structures, stabilities, and electrical interface properties of Pt adatoms, clusters, contacts, and Pt ions at and below the TiO2(110) surface. At temperatures below 700 K, metallic Pt exhibits electron acceptor properties and causes Schottky barrier formation at the Pt/TiO2 interface. At temperatures above 1000 K, Pt ions migrate into subsurface layers. The ions act as bulk donors and cause a switch from Schottky barrier towards Ohmic contact behaviour of electronic transport across the Pt/TiO2 interface.
Keywords
- Oxygen Partial Pressure
- Lower Unoccupied Molecular Orbital
- Ohmic Contact
- Schottky Barrier
- Intrinsic Point Defect
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Schierbaum, K.D., Wei-Xing, X., Fischer, S., Göpel, W. (1993). Schottky Barriers and Ohmic Contacts with Pt/TiO2(110): Implications to Control Gas Sensor Properties. In: Freund, HJ., Umbach, E. (eds) Adsorption on Ordered Surfaces of Ionic Solids and Thin Films. Springer Series in Surface Sciences , vol 33. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-78632-7_24
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DOI: https://doi.org/10.1007/978-3-642-78632-7_24
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