Surface Emitting Laser Diodes and Wavelength Break Selective Photodetectors

  • T. Wipiejewski
  • K. Panzlaff
  • K. J. Ebeling
Part of the ESPRIT Basic Research Series book series (ESPRIT BASIC)


The structure and fabrication of a vertical cavity surface emitting laser diode is described. The lowest threshold currents are 16mA. The light emission is single longitudinal mode at 915 nm wavelength. Under pulsed excitation the maximum output power is 3.5 mW. A wavelength selective photodetector of related structure shows a quantum efficiency of 10% at resonance with 1.5nm spectral width at half maximum.


Quantum Efficiency Threshold Current External Quantum Efficiency Molecular Beam Epitaxy Growth Single Longitudinal Mode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Jewell, J. L., Harbison, J. P., Scherer, A., Lee, Y. H., Florez, L. T.: Vertical-Cavity Surface-Emitting Lasers: Design, Growth, Fabrication, Characterization. IEEE J. Quantum Electron. 27 (1991) 1332–1346.CrossRefGoogle Scholar
  2. 2.
    Wipiejewski, T., Panzlaff, K., Zeeb, E., Ebeling, K. J.: Vertical cavity laser diodes with two-sided output and polarization control with external feedback. Post-Deadline Paper, ESSDERC’92, Leuven, Belgium, (1992).Google Scholar
  3. 3.
    Tai, K., Hasnain, G., Wynn, J. D., Fischer, R. J., Wang, Y. H., Weir, B., Gamelin, J., Cho, A. Y.: 90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8μm diameter cor e silica fiber. Electr. Lett. 26 (1990) 1628–1629.CrossRefGoogle Scholar
  4. 4.
    Geels, R. S., Coldren, L. A.: Submilliamp threshold vertical-cavity laser diodes. Appl. Phys. Lett. 57 (1990) 1605–1607.CrossRefGoogle Scholar
  5. 5.
    Wipiejewski, K. Panzlaff, E. Zeeb and K.J. Ebeling: Low threshold inverted npn-InGaAs/GaAs vertical cavity laser diodes with lateral current supply. LEOS’92, Boston, USA, (1992).Google Scholar
  6. 6.
    Wipiejewski, T.: Diplomarbeit, Inst. f. Hochfrequenztechnik, Braunschweig (1990).Google Scholar
  7. 7.
    Kishino, K., Ünlü, M. S., Chyi, J.-I., Reed, J., Arsenault, L., Morkoç, H.: Resonant Cavity-Enhanced (RCE) Photodetectors. IEEE J. Quantum Electron. 27 (1991) 2178–2190.CrossRefGoogle Scholar
  8. 8.
    Wipiejewski, T., Ebeling, K. J.: In Situ Control of Wet Chemical Etching of AlGaAs Multilayer Structures. German IEEE MTT-Chapter Workshop on Het-erostructure Technology, Guenzburg, (1991).Google Scholar
  9. 9.
    Geels, R. S., Coldren, L. A.: Low threshold, high power, vertical-cavity surface-emitting lasers. Electr. Lett. 27 (1991) 1984–1985.CrossRefGoogle Scholar

Copyright information

© ECSC — EEC — EAEC, Brussels — Luxembourg 1993

Authors and Affiliations

  • T. Wipiejewski
    • 1
  • K. Panzlaff
    • 1
  • K. J. Ebeling
    • 1
  1. 1.Department of OptoelectronicsUniversity of UlmUlmGermany

Personalised recommendations