Surface Emitting Laser Diodes and Wavelength Break Selective Photodetectors

  • T. Wipiejewski
  • K. Panzlaff
  • K. J. Ebeling
Part of the ESPRIT Basic Research Series book series (ESPRIT BASIC)


The structure and fabrication of a vertical cavity surface emitting laser diode is described. The lowest threshold currents are 16mA. The light emission is single longitudinal mode at 915 nm wavelength. Under pulsed excitation the maximum output power is 3.5 mW. A wavelength selective photodetector of related structure shows a quantum efficiency of 10% at resonance with 1.5nm spectral width at half maximum.


Recombination GaAs NiAu ECSC 


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Copyright information

© ECSC — EEC — EAEC, Brussels — Luxembourg 1993

Authors and Affiliations

  • T. Wipiejewski
    • 1
  • K. Panzlaff
    • 1
  • K. J. Ebeling
    • 1
  1. 1.Department of OptoelectronicsUniversity of UlmUlmGermany

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