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Surface Emitting Laser Diodes and Wavelength Break Selective Photodetectors

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Optical Information Technology

Part of the book series: ESPRIT Basic Research Series ((ESPRIT BASIC))

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Abstract

The structure and fabrication of a vertical cavity surface emitting laser diode is described. The lowest threshold currents are 16mA. The light emission is single longitudinal mode at 915 nm wavelength. Under pulsed excitation the maximum output power is 3.5 mW. A wavelength selective photodetector of related structure shows a quantum efficiency of 10% at resonance with 1.5nm spectral width at half maximum.

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References

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Author information

Authors and Affiliations

  1. Department of Optoelectronics, University of Ulm, Oberer Eselsberg, W-7900, Ulm, Germany

    T. Wipiejewski, K. Panzlaff & K. J. Ebeling

Authors
  1. T. Wipiejewski
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  2. K. Panzlaff
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  3. K. J. Ebeling
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Editor information

Editors and Affiliations

  1. Department of Physics, Heriot-Watt University, Riccarton, Edinburgh, EH14 4AS, UK

    S. Desmond Smith  & Roderick F. Neale  & 

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© 1993 ECSC — EEC — EAEC, Brussels — Luxembourg

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Wipiejewski, T., Panzlaff, K., Ebeling, K.J. (1993). Surface Emitting Laser Diodes and Wavelength Break Selective Photodetectors. In: Smith, S.D., Neale, R.F. (eds) Optical Information Technology. ESPRIT Basic Research Series. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-78140-7_30

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  • DOI: https://doi.org/10.1007/978-3-642-78140-7_30

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-78142-1

  • Online ISBN: 978-3-642-78140-7

  • eBook Packages: Springer Book Archive

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