Subnanosecond Switching and Recovery in a Fabry-Perot Etalon Based on Bulk Heavily Doped n-GaAs
Shaping of 1.9 ns laser pulses and optical switching behaviour with about 100 ps switching on/off times are measured in a bulk n-GaAs Fabry-Perot etalon. The etalon structure is not optimised, having a finesse of about 4 at low incident power. The impurity-related fast nonlinearity causes optical switching at wavelengths slightly longer than that of the fundamental absorption edge with incident intensities of ~ 106 W/cm2, corresponding to a switch energy of ~ 1 pJ/μm2.
KeywordsRefractive Index Nonlinearity Incident Intensity Switch Energy Short Wavelength Side High Incident Power
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