Subnanosecond Switching and Recovery in a Fabry-Perot Etalon Based on Bulk Heavily Doped n-GaAs

  • D. J. Goodwill
  • F. V. Karpushko
  • S. D. Smith
  • A. C. Walker
Part of the ESPRIT Basic Research Series book series (ESPRIT BASIC)

Abstract

Shaping of 1.9 ns laser pulses and optical switching behaviour with about 100 ps switching on/off times are measured in a bulk n-GaAs Fabry-Perot etalon. The etalon structure is not optimised, having a finesse of about 4 at low incident power. The impurity-related fast nonlinearity causes optical switching at wavelengths slightly longer than that of the fundamental absorption edge with incident intensities of ~ 106 W/cm2, corresponding to a switch energy of ~ 1 pJ/μm2.

Keywords

GaAs ECSC 

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Copyright information

© ECSC — EEC — EAEC, Brussels — Luxembourg 1993

Authors and Affiliations

  • D. J. Goodwill
    • 1
  • F. V. Karpushko
    • 1
  • S. D. Smith
    • 1
  • A. C. Walker
    • 1
  1. 1.Department of PhysicsHeriot-Watt University RiccartonEdinburghUK

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