Introduction

  • Morton B. Panish
  • Henryk Temkin
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 26)

Abstract

During the past two decades, the development of interest in the study of heterostructures has paralleled their growth in a variety of semiconductor materials. This parallel development has resulted from the fact that precision epitaxial growth methods have provided new degrees of freedom for the basic researcher and the semiconductor device developer who, in return, have provided the motivation for support of the development of more sophisticated epitaxy methods.

Keywords

Phosphorus Microwave Manifold Recom Bination Arsenic 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • Morton B. Panish
    • 1
  • Henryk Temkin
    • 1
  1. 1.AT&T Bell LaboratoriesMurray HillUSA

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