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ESDIAD Studies of Chlorine Adsorption at Silicon(100)

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Book cover Desorption Induced by Electronic Transitions DIET V

Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 31))

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Abstract

Electron stimulated desorption ion angular distribution (ESDIAD) data are presented for Cl2 adsorption at the Si(100) surface. The ion angular distribution and the total ion yield are found to be temperature dependent over the range studied (300 K to 670 K). These observations are interpreted in terms of the irreversible thermal conversion of tilted surface chloride species to normally orientated species bonded at asymmetric dimer sites.

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Author information

Authors and Affiliations

  1. Interdisciplinary Research Centre in Surface Science and Department of Electrical Engineering and Electronics, University of Liverpool, P.O. Box 147, Liverpool, L69 3BX, UK

    S. L. Bennett, C. L. Greenwood & E. M. Williams

Authors
  1. S. L. Bennett
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  2. C. L. Greenwood
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  3. E. M. Williams
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Editor information

Editors and Affiliations

  1. Sandia National Laboratories, Albuquerque, P.O. Box 5800, Albuquerque, NM, 87185, USA

    Alan R. Burns , Ellen B. Stechel  & Dwight R. Jennison ,  & 

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© 1993 Springer-Verlag Berlin Heidelberg

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Bennett, S.L., Greenwood, C.L., Williams, E.M. (1993). ESDIAD Studies of Chlorine Adsorption at Silicon(100). In: Burns, A.R., Stechel, E.B., Jennison, D.R. (eds) Desorption Induced by Electronic Transitions DIET V. Springer Series in Surface Sciences, vol 31. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-78080-6_41

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  • DOI: https://doi.org/10.1007/978-3-642-78080-6_41

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-78082-0

  • Online ISBN: 978-3-642-78080-6

  • eBook Packages: Springer Book Archive

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