State-Resolved Studies of the Laser-Induced Desorption of NO from Si(111): The Importance of Localized Excitations

  • L. J. Richter
  • S. A. Buntin
  • D. S. King
  • R. R. Cavanagh
Conference paper
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 31)

Abstract

Quantum-state-resolved techniques have been applied to the laser-induced desorption (LID) of NO from Si(111). When contrasted with LID from metal substrates, where prevailing theories indicate the crucial role of the rapid screening response of the substrate, the LID results from silicon indicate the overriding importance of the localization of electronic excitations inherent to the covalent bonds of the substrate.

Keywords

Migration Attenuation Recombination GaAs Photolysis 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • L. J. Richter
    • 1
  • S. A. Buntin
    • 1
  • D. S. King
    • 1
  • R. R. Cavanagh
    • 1
  1. 1.National Institute of Standards and TechnologyGaithersburgUSA

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