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Semiconductor Physics

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Encounter with Chaos

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Abstract

In this chapter we present a comprehensive outline of a model semiconductor system (as an appropriate example of chaos in experiment) considered from the viewpoint of the underlying physics. Section 2.1 is devoted to fundamental aspects in terms of the nonlinear semiconductor transport properties. Section 2.2 gives a brief survey of recent chaos experiments performed on a variety of different semiconductor systems. Sections 2.3 and 2.4 deal with the systematic physical characterization and the most essential results of a particular semiconductor experiment, respectively. Here we focus on spatio-temporal instabilities of the electric charge transport during low-temperature impact ionization breakdown in extrinsic germanium.

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Authors and Affiliations

  1. Centre de Recherche sur les très Basses Températures, C.N.R.S., PB 166, F-38042, Grenoble Cedex 9, France

    Dr. Joachim Peinke

  2. Physics Institute, University of Zurich, Schönberggasse 9, CH-8001, Zurich, Switzerland

    Priv.-Doz. Dr. Jürgen Parisi & Dr. Ruedi Stoop

  3. Institute for Physical and Theoretical Chemistry, University of Tübingen, Morgenstelle 8, W-7400, Tübingen, Fed. Rep. of Germany

    Prof. Dr. Otto E. Rössler

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  1. Dr. Joachim Peinke
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  2. Priv.-Doz. Dr. Jürgen Parisi
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  3. Prof. Dr. Otto E. Rössler
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  4. Dr. Ruedi Stoop
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© 1992 Springer-Verlag Berlin Heidelberg

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Peinke, J., Parisi, J., Rössler, O.E., Stoop, R. (1992). Semiconductor Physics. In: Encounter with Chaos. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-77625-0_2

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  • DOI: https://doi.org/10.1007/978-3-642-77625-0_2

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