Lead/Bismuth- and Niobium-Based SIN Tunnel Junctions

  • T. Lehnert
  • K. H. Gundlach
  • H. Kohlstedt
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 64)

Abstract

This paper describes the preparation and properties of various types of SIN devices: Pb/Bi/In-oxide-Ag junctions, evaporated through metal masks and three slightly different types of Nb/Al-based junctions, applying “trilayer-technique”, similar as for Nb-Aloxide-Nb SIS junctions. These three types are: Al(thick)-Alox/Al-Nbl, Nb-Alox-All(thick), Nb-Alox-Al(thick)-Nbl. We show the anodization profiles of these trilayers and compare experimental I–V characteristics with theory. Photon steps were observed at 370 GHz.

Keywords

Quartz Tantalum 

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References

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    Metal masks are fabricated by Dr. Johannes Heidenhain, G.m.b.H., 8225 Traunreut, Germany.Google Scholar
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    R. Blundell and K.H. Gundlach, unpublished results.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • T. Lehnert
    • 1
  • K. H. Gundlach
    • 1
  • H. Kohlstedt
    • 1
  1. 1.IRAM, Institut de Radioastronomie MillimétriqueSant-Martin d’HèresFrance

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