Lead/Bismuth- and Niobium-Based SIN Tunnel Junctions
This paper describes the preparation and properties of various types of SIN devices: Pb/Bi/In-oxide-Ag junctions, evaporated through metal masks and three slightly different types of Nb/Al-based junctions, applying “trilayer-technique”, similar as for Nb-Aloxide-Nb SIS junctions. These three types are: Al(thick)-Alox/Al-Nbl, Nb-Alox-All(thick), Nb-Alox-Al(thick)-Nbl. We show the anodization profiles of these trilayers and compare experimental I–V characteristics with theory. Photon steps were observed at 370 GHz.
KeywordsTunnel Barrier Single Junction Conversion Gain Metal Mask Normal State Resistance
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- present address: Advantest Laboratories Ltd, Otaru, 047-02 Hokkaido, Japan.Google Scholar
- R. Blundell, to be published.Google Scholar
- Metal masks are fabricated by Dr. Johannes Heidenhain, G.m.b.H., 8225 Traunreut, Germany.Google Scholar
- R. Blundell and K.H. Gundlach, unpublished results.Google Scholar