Lead/Bismuth- and Niobium-Based SIN Tunnel Junctions
This paper describes the preparation and properties of various types of SIN devices: Pb/Bi/In-oxide-Ag junctions, evaporated through metal masks and three slightly different types of Nb/Al-based junctions, applying “trilayer-technique”, similar as for Nb-Aloxide-Nb SIS junctions. These three types are: Al(thick)-Alox/Al-Nbl, Nb-Alox-All(thick), Nb-Alox-Al(thick)-Nbl. We show the anodization profiles of these trilayers and compare experimental I–V characteristics with theory. Photon steps were observed at 370 GHz.
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- present address: Advantest Laboratories Ltd, Otaru, 047-02 Hokkaido, Japan.Google Scholar
- R. Blundell, to be published.Google Scholar
- Metal masks are fabricated by Dr. Johannes Heidenhain, G.m.b.H., 8225 Traunreut, Germany.Google Scholar
- R. Blundell and K.H. Gundlach, unpublished results.Google Scholar