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Lead/Bismuth- and Niobium-Based SIN Tunnel Junctions

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Superconducting Devices and Their Applications

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 64))

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Abstract

This paper describes the preparation and properties of various types of SIN devices: Pb/Bi/In-oxide-Ag junctions, evaporated through metal masks and three slightly different types of Nb/Al-based junctions, applying “trilayer-technique”, similar as for Nb-Aloxide-Nb SIS junctions. These three types are: Al(thick)-Alox/Al-Nbl, Nb-Alox-All(thick), Nb-Alox-Al(thick)-Nbl. We show the anodization profiles of these trilayers and compare experimental I–V characteristics with theory. Photon steps were observed at 370 GHz.

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References

  1. present address: Advantest Laboratories Ltd, Otaru, 047-02 Hokkaido, Japan.

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  6. Metal masks are fabricated by Dr. Johannes Heidenhain, G.m.b.H., 8225 Traunreut, Germany.

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  7. R. Blundell and K.H. Gundlach, unpublished results.

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Author information

Authors and Affiliations

  1. IRAM, Institut de Radioastronomie Millimétrique, 300, rue de la Piscine, Domaine Universitaire, F-38406, Sant-Martin d’Hères, France

    T. Lehnert, K. H. Gundlach & H. Kohlstedt

Authors
  1. T. Lehnert
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  2. K. H. Gundlach
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  3. H. Kohlstedt
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Editor information

Editors and Affiliations

  1. Institut Berlin, Physikalisch-Technische Bundesanstalt, Abbestraße 2-12, W-1000, Berlin 10, Fed. Rep. of Germany

    Hans Koch  & Heinz Lübbig  & 

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© 1992 Springer-Verlag Berlin Heidelberg

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Lehnert, T., Gundlach, K.H., Kohlstedt, H. (1992). Lead/Bismuth- and Niobium-Based SIN Tunnel Junctions. In: Koch, H., Lübbig, H. (eds) Superconducting Devices and Their Applications. Springer Proceedings in Physics, vol 64. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-77457-7_36

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  • DOI: https://doi.org/10.1007/978-3-642-77457-7_36

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-77459-1

  • Online ISBN: 978-3-642-77457-7

  • eBook Packages: Springer Book Archive

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