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Nonequilibrium Transport in a Superconductor-Semiconductor Heterostructure

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Single-Electron Tunneling and Mesoscopic Devices

Part of the book series: Springer Series in Electronics and Photonics ((SSEP,volume 31))

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Abstract

Carrier transport through single-crystal silicon sandwiched between superconducting electrodes is studied. In a 50 nm thin degenerately doped membrane a strongly voltage dependent current is found, substantially below the value in the normal state, together with subharmonic energy gap structure. This is explained as an intrinsic property due to elastic and Andreev scattering at the interfaces and absence of inelastic scattering in the silicon.

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References

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Author information

Authors and Affiliations

  1. Department of Applied Physics and Materials Science Centre, University of Groningen, Nijenborgh 18, NL-9749, AG Groningen, The Netherlands

    W. M. van Huffelen & T. M. Klapwijk

Authors
  1. W. M. van Huffelen
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  2. T. M. Klapwijk
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Editor information

Editors and Affiliations

  1. Physikalisch-Technische Bundesanstalt, Institut Berlin, Abbestrasse 2-12, W-1000, Berlin 10, Fed. Rep. of Germany

    Hans Koch  & Heinz Lübbig  & 

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© 1992 Springer-Verlag Berlin Heidelberg

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van Huffelen, W.M., Klapwijk, T.M. (1992). Nonequilibrium Transport in a Superconductor-Semiconductor Heterostructure. In: Koch, H., Lübbig, H. (eds) Single-Electron Tunneling and Mesoscopic Devices. Springer Series in Electronics and Photonics, vol 31. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-77274-0_40

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  • DOI: https://doi.org/10.1007/978-3-642-77274-0_40

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-77276-4

  • Online ISBN: 978-3-642-77274-0

  • eBook Packages: Springer Book Archive

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