Variable ß RF SQUID

  • Siyuan Han
  • J. Lapointe
  • J. E. Lukens
Conference paper
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 31)

Abstract

Variable ß rf SQUIDs have been designed and fabricated by replacing the single Josephson junction (JJ) of the standard rf SQUID by a small inductance dc SQUID. The important characteristics, such as the small oscillation frequencies at the bottom of the potential well and the barrier height of the symmetric double well are in situ tunable. The potential associated with the device is derived and the techniques used to determine the parameters of the device are described.

Keywords

Archie 

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References

  1. 1.
    A.J. Leggett, S. Chakravarty, A.T. Dorsey, M.P.A. Fisher, A. Garg, and W. Zwerger, Rev. Mod. Phys. 59, 1 (1987), and references therein.Google Scholar
  2. 2.
    S. Han, J. Lapointe, and J.E. Lukens, Phys. Rev. Lett 63, 1712 (1989)CrossRefADSGoogle Scholar
  3. S. Han, J. Lapointe, and J.E. Lukens, Phys. Rev. Lett. 66, 810 (1991), and references therein.CrossRefADSGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • Siyuan Han
    • 1
  • J. Lapointe
    • 1
  • J. E. Lukens
    • 1
  1. 1.Department of PhysicsSUNY at Stony BrookStony BrookUSA

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