Abstract
At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test apparatus (NPES-1) is shown in Fig. l, which consists of a gun producing (1–5) KeV polarized electrons and a standard 100 KeV Mott polarimeter.1) By this apparatus, we extracted electrons with the spin electron polarization (ESP) of (30 ~ 33)% and the quantum efliciency (QE) of ~ 4% from the bulk GaAs. We obtained also the beam with ESP of (35 ~ 40)% and QE of ~ 0.5% from the thin(0.5πm thick) MOCVD GaAs layer whose surface was covered by the oxide film for ambient transfer.
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© 1991 Springer-Verlag Berlin Heidelberg
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Nakanishi, T., Nakamura, S. (1991). Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs. In: Meyer, W., Steffens, E., Thiel, W. (eds) High Energy Spin Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-76661-9_7
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DOI: https://doi.org/10.1007/978-3-642-76661-9_7
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