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Implanted Tin Oxide Thin Films for Selective Gas Sensing

  • F. C. Stedile
  • C. V. Barros Leite
  • W. H. Schreiner
  • I. J. R. Baumvol
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 62)

Abstract

Tin oxide thin films obtained by reactive sputtering were submitted to different thermal annealings and then implanted with Fe+, Cu+, Zn+, Ga+, As+. A subsequent air annealing was performed after implantation. The system was characterized by Sheet Resistance measurements, Rutherford Back-scattering Spectroscopy and Nuclear Resonant Scattering analyses. Some correlations between the depth distribution of the implanted species and the O/Sn ratios as a function of depth were found. The results indicate the possibility of modulating the 0/Sn ratio depth profile with implantation which is useful for the production of stable and selective gas sensors.

Keywords

Rutherford Backscatter Spectroscopy Outermost Surface Reactive Sputtering Ratio Profile Rutherford Backscatter Spectroscopy Spectrum 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • F. C. Stedile
    • 1
  • C. V. Barros Leite
    • 2
  • W. H. Schreiner
    • 1
  • I. J. R. Baumvol
    • 1
  1. 1.Laboratório de Filmes Finos, Instituto de FísicaUniversidade Federal do Rio Grande do SulPorto AlegreBrazil
  2. 2.Departamento de FísicaPUCRJRio de JaneiroBrazil

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