Implanted Tin Oxide Thin Films for Selective Gas Sensing
Tin oxide thin films obtained by reactive sputtering were submitted to different thermal annealings and then implanted with Fe+, Cu+, Zn+, Ga+, As+. A subsequent air annealing was performed after implantation. The system was characterized by Sheet Resistance measurements, Rutherford Back-scattering Spectroscopy and Nuclear Resonant Scattering analyses. Some correlations between the depth distribution of the implanted species and the O/Sn ratios as a function of depth were found. The results indicate the possibility of modulating the 0/Sn ratio depth profile with implantation which is useful for the production of stable and selective gas sensors.
KeywordsCrystallization Migration GaAs Lution Quinone
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- L.V. Astaf’eva and G.P. Skornyakov, Inorg. Mater., 17 (1981) 1208.Google Scholar
- A. Licciardello, O. Puglisi and S. Pignataro, J. Chem. Soc., Faraday Trans. 2, 81 (1985) 985.Google Scholar
- Shih-Chia Chang, J. Vac. Technol. A, 1 (1983) 524.Google Scholar
- D.D. Casey, Extended Abstract No. 336, Fall Meeting of Electrochemical Society, Atlanta, Georgia, 1977.Google Scholar