Implanted Tin Oxide Thin Films for Selective Gas Sensing
Tin oxide thin films obtained by reactive sputtering were submitted to different thermal annealings and then implanted with Fe+, Cu+, Zn+, Ga+, As+. A subsequent air annealing was performed after implantation. The system was characterized by Sheet Resistance measurements, Rutherford Back-scattering Spectroscopy and Nuclear Resonant Scattering analyses. Some correlations between the depth distribution of the implanted species and the O/Sn ratios as a function of depth were found. The results indicate the possibility of modulating the 0/Sn ratio depth profile with implantation which is useful for the production of stable and selective gas sensors.
KeywordsRutherford Backscatter Spectroscopy Outermost Surface Reactive Sputtering Ratio Profile Rutherford Backscatter Spectroscopy Spectrum
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