GaAs/AlGaAs Reflection-Type Optical Switch Using Heterojunction Bipolar Transistor Waveguide Structure
Theoretical analysis of the optical switching characteristics expected for a GaAs/AlGaAs carrier-injected reflection-type optical switch employing a double-heterojunction bipolar transistor waveguide structure is presented on the basis of the experimentally determined results. It has been shown that an extinction ratio of better than 12 dB could be obtained at the input base current of as small as 1.5 mA for a X-crossing optical switch with an intersecting angle of 4°.
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