Top-Surface-Emitting GaAs Four-Quantum-Well Lasers Emitting at 0.85 µm
Room-temperature CW and pulsed lasing of top-surface-emitting, vertical-cavity, self-aligned, GaAs quantum-well lasers is achieved at ~845 nm. The active gain medium is four 100-Å-thick GaAs quantum wells. The whole structure is grown by molecular beam epitaxy. Deep H+-ion implantation followed by annealing is used to control a vertical profile of resistivity for an efficient current injection at the active region. The threshold current is 2.2 mA for CW and pulsed operation using 10-jam diameter lasers. Differential quantum efficiency is about 20%. Minimum threshold current density per quantum well of 360 A/cm2 is obtained. Maximum CW output power better than 1.5 mW is obtained.
KeywordsMolecular Beam Epitaxy GaAs Substrate Threshold Current Density Diameter Laser Differential Quantum Efficiency
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- 8.M. Orenstein, A. C. Von Lehman, C. Chang-Hasnain, N. Stoeffel, L. T. Florez, J. Harbison, and E. M. Clausen, Technical Digest of Optical Society of America, Orlando, Florida, Oct. 1989, paper PD-22.Google Scholar