One-Dimensional Fluid Mechanics/Kinetics Modeling of the CVD of SiC in a Vertical Reactor

  • M. E. Aluko
  • C. Mbeledogu
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 43)

Abstract

The CVD of SiC and other epitaxial films is a complex process involving a great deal of chemical, kinetic, thermodynamic and transport phenomena, and there is a need to model the effects of process variables (reactant concentration, temperature, pressure, etc.) on performance variables (growth rate, film composition, thickness, etc.)

Keywords

Carbide Silane Hydrocarbon Propane 

Copyright information

© Springer-Verlag Berlin Heidelberg 1989

Authors and Affiliations

  • M. E. Aluko
    • 1
  • C. Mbeledogu
    • 1
  1. 1.Department of Chemical Engineering and Material Science Research Center of ExcellenceHoward UniversityUSA

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