Abstract
The CVD of SiC and other epitaxial films is a complex process involving a great deal of chemical, kinetic, thermodynamic and transport phenomena, and there is a need to model the effects of process variables (reactant concentration, temperature, pressure, etc.) on performance variables (growth rate, film composition, thickness, etc.)
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© 1989 Springer-Verlag Berlin Heidelberg
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Aluko, M.E., Mbeledogu, C. (1989). One-Dimensional Fluid Mechanics/Kinetics Modeling of the CVD of SiC in a Vertical Reactor. In: Rahman, M.M., Yang, C.YW., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide II. Springer Proceedings in Physics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-75048-9_8
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DOI: https://doi.org/10.1007/978-3-642-75048-9_8
Publisher Name: Springer, Berlin, Heidelberg
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