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One-Dimensional Fluid Mechanics/Kinetics Modeling of the CVD of SiC in a Vertical Reactor

  • M. E. Aluko
  • C. Mbeledogu
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 43)

Abstract

The CVD of SiC and other epitaxial films is a complex process involving a great deal of chemical, kinetic, thermodynamic and transport phenomena, and there is a need to model the effects of process variables (reactant concentration, temperature, pressure, etc.) on performance variables (growth rate, film composition, thickness, etc.)

Keywords

Experimental Data Growth Rate Heat Transfer Fluid Flow Unique Feature 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Springer-Verlag Berlin Heidelberg 1989

Authors and Affiliations

  • M. E. Aluko
    • 1
  • C. Mbeledogu
    • 1
  1. 1.Department of Chemical Engineering and Material Science Research Center of ExcellenceHoward UniversityUSA

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