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Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films

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Amorphous and Crystalline Silicon Carbide II

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 43))

Abstract

The etching mechanisms for the reactive ion etching of SiC thin films were investigated using fluorinated gases, such as SF6/O2, CHF3/O2, CBrF3/O2. The major mechanisms involved are: (a) physical removal by sputtering due to ionized particles within the plasma, (b) chemical reaction of active plasma species with C and Si with the generation of volatile products. The self-induced DC Bias has been shown to have a very strong effect up to a certain cross-over value of around 300V. The effect is related to the rate-limiting removal of the C-rich surface layer. We have confirmed that the chemical reaction process proceeds by removal of Si through reactions with F species (to generate SiF4) while C is removed by reactions with O2 (to generate COx) only. No reaction between C and F was observed in the experimental results. A carbon blocking model is proposed to describe the etching profile under RIE mode.

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Author information

Authors and Affiliations

  1. Intel Corporation, Santa Clara, CA, 55052, USA

    W.-S. Pan

  2. Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH, 45221, USA

    A. J. Steckl

Authors
  1. W.-S. Pan
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  2. A. J. Steckl
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Santa Clara University, Santa Clara, CA, 95053, USA

    Mahmud M. Rahman  & Cary Y.-W. Yang  & 

  2. Materials Science Research Center of Excellence, Howard University, 2300 6th Street N.W., Washington, DC, 20059, USA

    Gary L. Harris

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© 1989 Springer-Verlag Berlin, Heidelberg

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Pan, WS., Steckl, A.J. (1989). Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films. In: Rahman, M.M., Yang, C.YW., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide II. Springer Proceedings in Physics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-75048-9_43

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  • DOI: https://doi.org/10.1007/978-3-642-75048-9_43

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-75050-2

  • Online ISBN: 978-3-642-75048-9

  • eBook Packages: Springer Book Archive

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