Abstract
Polycrystalline silicon carbide/single crystal silicon heterojunctions were prepared by electron beam evaporation to evaluate their characteristics as an emitter layer of a HBT. The ideality factor was 1.3 at room temperature and increased up to 2.0 at 77 K. HBTs were fabricated using these layers as the emitter. The common emitter current gain was 2.5.
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© 1989 Springer-Verlag Berlin, Heidelberg
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Kamimura, K., Nishibe, Y., Onuma, Y. (1989). SiC/Si HBT Using Polycrystalline SiC Layers Prepared by Electron Beam Evaporation. In: Rahman, M.M., Yang, C.YW., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide II. Springer Proceedings in Physics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-75048-9_41
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DOI: https://doi.org/10.1007/978-3-642-75048-9_41
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