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Amorphous and Crystalline Silicon Carbide II pp 191–197Cite as

SiC as a Potential FET Gate Insulator

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 43))

Abstract

Gate insulators for 111-V compound semiconductors are more difficult to fabricate than those for silicon. Thus, an exploration for a suitable insulator is continuing. SiC films grown by dc triode sputtering in an ultra high vacuum system appear to meet all the necessary criteria except for the fact that the resistance is somewhat low. Trying to determine the properties of these films is not always an easy task. The sputtered SiC films are hard, protective coatings. The important properties are electrical in nature and were measured by measuring the current-voltage characteristics, the complex impedance-frequency characteristics, and the complex impedance-voltage characteristics.

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References

  1. R. J. Soukup, A. K. Kulkarni, and D. M Mosher: J. Vac. Sci. Technol. 16, 208 (1979)

    Article  ADS  Google Scholar 

  2. J. G. Simmons, G. S. Nadkarni, and M. C. Lancaster: J. Appl. Phys. 41, 538 (1970)

    Article  ADS  Google Scholar 

  3. R. J. Soukup, D. M. Mosher, and A. K. Kulkarni: Thin Solid Films 52, (1978)

    Google Scholar 

  4. A. K. Kulkarni and R. J. Soukup: J. Vac. Sci. Technol. 20, 807 (1982)

    Article  ADS  Google Scholar 

  5. R. J. Soukup and J. R. Sullivan: scheduled for publication in May/June 1989 J. Vac. Sci. Technol. A

    Google Scholar 

  6. E. H. Nicol1ian and J. R. Brews: M0S (Metal Oxide Semiconductor) Physics and Technology (John Wiley & Sons, 1982 ), pp. 195–197

    Google Scholar 

  7. E. H. Nicol1ian and A. Goetzberqer: Bell Syst. Tech. J. 46, 1055 (1967)

    Google Scholar 

  8. Jae E. Oh, Joel D. Lamb, Paul G. Snyder, John A. Woollam, and David C. Liu: Solid State Electronics 29, 933 (1986)

    Article  ADS  Google Scholar 

  9. A. K. Jonscher: Dielectric Relaxation in Solids ( Chelsea Dielectrics Press, London, 1983 ), pp. 176–234

    Google Scholar 

  10. R. J. Soukup and T. E. Tiwald: J. Vac. Tech. Technol. A6, 1759 (1988)

    Article  ADS  Google Scholar 

  11. S.-N. Mei and T.-M. Lu: J. Vac. Sci. Technol. A6, 9 (1988)

    ADS  Google Scholar 

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Author information

Authors and Affiliations

  1. Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA

    R. J. Soukup & J. R. Sullivan

Authors
  1. R. J. Soukup
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  2. J. R. Sullivan
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Santa Clara University, Santa Clara, CA, 95053, USA

    Mahmud M. Rahman  & Cary Y.-W. Yang  & 

  2. Materials Science Research Center of Excellence, Howard University, 2300 6th Street N.W., Washington, DC, 20059, USA

    Gary L. Harris

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© 1989 Springer-Verlag Berlin, Heidelberg

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Soukup, R.J., Sullivan, J.R. (1989). SiC as a Potential FET Gate Insulator. In: Rahman, M.M., Yang, C.YW., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide II. Springer Proceedings in Physics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-75048-9_39

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  • DOI: https://doi.org/10.1007/978-3-642-75048-9_39

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-75050-2

  • Online ISBN: 978-3-642-75048-9

  • eBook Packages: Springer Book Archive

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