Abstract
An improved performance buried-gate junction field effect transistor (JFET) has been fabricated and evaluated. This structure employs an n-type R-SiC (111) thin film grown on the Si (0001) face of a p-type 6H β-SiC substrate. Electron-beam evaporated Ti/Au was used as an ohmic contact to the n-type β-SiC layer and thermally evaporated A1 was used to contact the n-type gate (substrate). Devices with 4μm gate lengths had a maximum room temperature transconductance of 20mS/mm, which is the highest reported for any β-SiC FET structure. The fabrication and performance of the improved devices will be compared with those of JFETs fabricated in similar β-SiC layers grown on a Si substrate. In addition, the experimental data have been analyzed using a charge control model. This analysis shows that the effective field-effect mobility (565 cm2/V-s) is close to the measured Hall mobility (470 cm2/V-s). Calculated drain current versus drain voltage (ID-VD) characteristics for a buried-gate JFET are in good agreement with the experimental data. Further improvements in device performance are anticipated as gate dimensions approach one micron or less.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
R. C. Marshall, T. W. Faust, Jr. and C. E. Ryan ed: Silicon Carbide-1973 ( University of South Carolina Press, Columbia, 1974 ) p. 673.
D. K. Ferry, “High Field Transport in Wide-Bandgap Semiconductors”, Phy. Rev., IB 12 pp. 2361–2369, 1975.
C. Van Opdorp and J. Vrakking, “Avalanche Breakdown in Epitaxial SiC p-n Junctions”, J. Appl. Phys. 40, pp. 2320–2322, 1969.
H. Matsunami, S. Nishino and H. Ono, “Heteroepitaxial Growth of Cubic Silicon Carbide on Foreign Substrates”, IEEE Transact. Electron Devices 28, pp. 1235–1236, 1981.
G. Kelner, S. Binari, K. Sieger, H. Kong, “β-SiC MESFET’s and Buried-Gate JFET’s”, IEEE Electron Device Letters, Vol. 8, pp. 428–430, 1987.
C. Vergnolie, R. Funck, and M. Laviron, “An adequate structure for power microwave FETs,” in ISSCC Dig. Tech. Papers, 1975, pp. 66–67.
H. S. Kong, G. T. Glass, R. S. Davis, “Epitaxial Growth of β-SiC Thin Films on 6H β-SiC Substrates via Chemical Vapor Deposition”, Appl. Phys. Letters, 49, pp. 1074–1076, 1986.
J. W. Palmour, R. F. Davis, P. Astell-Burt, P. Blackborow, “Surface Characteristics of Monocrystalline R-SiC Dry Etched in Florinated Gases”, Science and Technology of Microfabrication, Vol. 77, pp. 185–190, 1987.
M. Shur, GaAs Devices and Circuits (Plenum, New York), 1987.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1989 Springer-Verlag Berlin, Heidelberg
About this paper
Cite this paper
Kelner, G., Shur, M., Binari, S., Sleger, K., Kong, H. (1989). A High Transconductance β-SiC Buried-Gate Junction Field Effect Transistor. In: Rahman, M.M., Yang, C.YW., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide II. Springer Proceedings in Physics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-75048-9_38
Download citation
DOI: https://doi.org/10.1007/978-3-642-75048-9_38
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-75050-2
Online ISBN: 978-3-642-75048-9
eBook Packages: Springer Book Archive