β-SiC on Titanium Carbide for Solid State Devices

Abstract

Our approach to β-SiC epitaxial growth is to use TiC_x as a substrate, and to deliver both Si and C to the growth chamber from a single point of origin. Advantages of our approach, and the technical difficulties encountered in its implementation are discussed. Using this approach, we have established a β-SiC epitaxial growth process; wherein undoped and in situ doped β-SiC epilayers can be reproducibly grown at rates as high as 10 μm/hr. Results of in situ β-SiC doping with nitrogen, Al and B are presented. This includes a relation between β-SiC growth rate and dopant flow rate, and the maximum attainable concentration of each dopant in single crystal β-SiC. Current-voltage and C-V measurements obtained from Schottky diodes on undoped β-SiC are presented. The I-V characteristics (79 K to 380 K) of an in situ doped p-n junction, β-SiCdiode are summarized. Also, the structure and DC I-V curve obtained from β-SiC current limiter (FET) with a TiOx buffer layer are presented.