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Physics and Applications of Amorphous Silicon Carbide

  • Y. Hamakawa
Part of the Springer Proceedings in Physics book series (SPPHY, volume 43)

Abstract

A review is given of recent advances in plasma CVD produced amorphous and microcrystalline silicon carbide (a-SiC and μc-SiC) and their technological applications to optoelectronic devices. Firstly, a series of technical data on band gap control by the compositional regulation of source gases such as (SiH4)x+(CH4)μ(or (C2H4)y etc.), and also valence electron control by a mixture of doping gases (B2H6 for PH3 for n-type) are summarized. Secondly, some unique advantages of amorphous silicon alloys as a new optoelectronic material are pointed out from their basic physical properties and also in view of the device fabrication process. Then, the current state of the art in technological applications such as the solar photovoltaic field, photoreceptors and thin film LEDs (Light Emitting Diodes) are reviewed, and discussed.

Keywords

Solar Cell Amorphous Silicon Heterojunction Solar Cell Dark Conductivity Super Lattice 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • Y. Hamakawa
    • 1
  1. 1.Faculty of Engineering ScienceOsaka UniversityToyonaka, OsakaJapan

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