Abstract
Substitutional doping of rf-sputtered amorphous hydrogenated silicon carbide (a-SiC:H) films is achieved by adding controlled amounts of metalorganic substance i. e trimethylaluminum (CH3)3Al and ammonia (NH3) to the mixture of argon atmosphere. The samples were deposited at a constant substrate temperature of 250°C.
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© 1989 Springer-Verlag Berlin, Heidelberg
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Hanidu, G.A., Banerjee, P.K., Kim, J.S., Mitra, S.S. (1989). Vibrational and Electrical Properties of n and p Doped a-SiC:H Films. In: Rahman, M.M., Yang, C.YW., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide II. Springer Proceedings in Physics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-75048-9_26
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DOI: https://doi.org/10.1007/978-3-642-75048-9_26
Publisher Name: Springer, Berlin, Heidelberg
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