Photoluminescence and Transmission Electron Microscopy of Defects in SiC Grown on Si

  • W. J. Choyke
  • J. A. Powell
  • T. T. Cheng
  • P. Pirouz
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 43)

Abstract

We report on a systematic investigation of defects generated during the epitaxial growth of cubic SiC on (001)Si substrates. The SiC films were grown exactly on the [100] axis of the Si and on vicinal surfaces with an off-axis tilt of two and four degrees. Low temperature photoluminescence and transmission electron microscopy data related to the defects generated during growth are obtained for the three substrate orientations.

Keywords

Carbide 

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • W. J. Choyke
    • 1
  • J. A. Powell
    • 2
  • T. T. Cheng
    • 3
  • P. Pirouz
    • 3
  1. 1.University of PittsburghPittsburghUSA
  2. 2.NASA Lewis Research CenterClevelandUSA
  3. 3.Case Western Reserve UniversityClevelandUSA

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