Heteroepitaxial Growth of Cubic SiC on a Si Substrate Using the Si₂H₆-C₂H₂-H₂ System

Abstract

Cubic SiC films were deposited on Si substrates by chemical vapor deposition (CVD) using a buffer layer at a normal pressure using Si₂H₆ and C₂H₂ as source materials at a substrate temperature of 1100 – 1350°C. The activation energy for SiC formation was 41.3 kcal/mole. A single crystal was obtained at 1250 °C. A new approach for low temperature growth was tried using HCl addition during the crystal growth. A single crystal of cubic SiC was obtained at a substrate temperature of 1150 °C without employing the buffer layer.