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Studies on Carrier Lifetime and Deep Levels in CVD-Grown 3C-SiC by Photoconductivity and Microwave Absorption

  • H. Okumura
  • K. Endo
  • S. Misawa
  • E. Sakuma
  • S. Yoshida
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 43)

Abstract

Measurements of microwave absorption and photoconductivity after pulse illumination were carried out for CVD-grown 3C-SiC epilayers. From the transient analyses of measured decay curves, carrier lifetimes and deep levels of 3C-SiC were characterized spectroscopically. The relations between the observed transient features and the electrical properties of 3C-SiC epilayers are discussed, and a new technique for the characterization of deep levels in 3C-SiC is proposed.

Keywords

Decay Curve Carrier Density Carrier Lifetime Microwave Absorption Hall Mobility 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • H. Okumura
    • 1
  • K. Endo
    • 1
  • S. Misawa
    • 1
  • E. Sakuma
    • 1
  • S. Yoshida
    • 1
  1. 1.Electrotechnical LaboratoryTsukuba, IbarakiJapan

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