Studies on Carrier Lifetime and Deep Levels in CVD-Grown 3C-SiC by Photoconductivity and Microwave Absorption

  • H. Okumura
  • K. Endo
  • S. Misawa
  • E. Sakuma
  • S. Yoshida
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 43)

Abstract

Measurements of microwave absorption and photoconductivity after pulse illumination were carried out for CVD-grown 3C-SiC epilayers. From the transient analyses of measured decay curves, carrier lifetimes and deep levels of 3C-SiC were characterized spectroscopically. The relations between the observed transient features and the electrical properties of 3C-SiC epilayers are discussed, and a new technique for the characterization of deep levels in 3C-SiC is proposed.

Keywords

Microwave Carbide Recombination 

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • H. Okumura
    • 1
  • K. Endo
    • 1
  • S. Misawa
    • 1
  • E. Sakuma
    • 1
  • S. Yoshida
    • 1
  1. 1.Electrotechnical LaboratoryTsukuba, IbarakiJapan

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