Abstract
Measurements of microwave absorption and photoconductivity after pulse illumination were carried out for CVD-grown 3C-SiC epilayers. From the transient analyses of measured decay curves, carrier lifetimes and deep levels of 3C-SiC were characterized spectroscopically. The relations between the observed transient features and the electrical properties of 3C-SiC epilayers are discussed, and a new technique for the characterization of deep levels in 3C-SiC is proposed.
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© 1989 Springer-Verlag Berlin, Heidelberg
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Okumura, H., Endo, K., Misawa, S., Sakuma, E., Yoshida, S. (1989). Studies on Carrier Lifetime and Deep Levels in CVD-Grown 3C-SiC by Photoconductivity and Microwave Absorption. In: Rahman, M.M., Yang, C.YW., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide II. Springer Proceedings in Physics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-75048-9_18
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DOI: https://doi.org/10.1007/978-3-642-75048-9_18
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-75050-2
Online ISBN: 978-3-642-75048-9
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