Studies on Carrier Lifetime and Deep Levels in CVD-Grown 3C-SiC by Photoconductivity and Microwave Absorption
Measurements of microwave absorption and photoconductivity after pulse illumination were carried out for CVD-grown 3C-SiC epilayers. From the transient analyses of measured decay curves, carrier lifetimes and deep levels of 3C-SiC were characterized spectroscopically. The relations between the observed transient features and the electrical properties of 3C-SiC epilayers are discussed, and a new technique for the characterization of deep levels in 3C-SiC is proposed.
KeywordsMicrowave Carbide Recombination
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