Abstract
A consistent picture is proposed to interpret the doping induced change in both a-Si:H and a-SiC:H based on observations from infrared spectroscopy. It was found that in a-Si:H heavy boron doping enhances the formation of one-Si vacancies and removes the hydrogen preferentially, whereas phosphorus doping enhances the formation of multi-Si vacancies with the hydrogen content not significantly affected. In a-SiC:H, the hydrogen bonding to both Si and C atoms is reduced with boron doping, while only the CH concentration decreased with phosphorus doping. Their optical gaps are found to be closely related to the different kinds of structure change induced by the two dopants.
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© 1989 Springer-Verlag Berlin, Heidelberg
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Sah, WJ., Lee, SC. (1989). Doping-Induced Structural Change in Amorphous Silicon (Carbon) Hydrogen Alloy. In: Rahman, M.M., Yang, C.YW., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide II. Springer Proceedings in Physics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-75048-9_16
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DOI: https://doi.org/10.1007/978-3-642-75048-9_16
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