X-Ray Photoelectron Spectroscopy Study of Hydrogenated Amorphous Silicon Carbide Films

  • A. S. Byrne
  • M. Ju
  • T. Asano
  • M. M. Rahman
  • C. Y. Yang
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 43)

Abstract

In order to investigate electronic and bonding structures in hydrogenated amorphous silicon carbide (a-SiC:H) films, an x-ray photoelectron spectroscopy (XPS) study was carried out. The films investigated were produced in an inductively-coupled glow-discharge plasma CVD system. The source gases were SiH4 and CH4. The amorphous film chemistry and composition were evaluated for a range of source gas mixtures and are compared with data obtained from a crystalline silicon carbide sample. The specific surface chemical bonds and bulk bonds were contrasted. In addition to the tetrahedral silicon-carbon bonds formed during film growth, a secondary species of carbon bond was found. This finding suggests that a form of non-tetrahedral carbon bonds is present in the as-grown amorphous silicon carbide material.

Keywords

Carbide Hydrocarbon Milling Monochromated 

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References

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • A. S. Byrne
    • 1
  • M. Ju
    • 1
  • T. Asano
    • 1
    • 2
  • M. M. Rahman
    • 1
  • C. Y. Yang
    • 1
  1. 1.Microelectronics LaboratorySanta Clara UniversitySanta ClaraUSA
  2. 2.Tokyo Institute of TechnologyMidoriku, YokohamaJapan

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