X-Ray Photoelectron Spectroscopy Study of Hydrogenated Amorphous Silicon Carbide Films
In order to investigate electronic and bonding structures in hydrogenated amorphous silicon carbide (a-SiC:H) films, an x-ray photoelectron spectroscopy (XPS) study was carried out. The films investigated were produced in an inductively-coupled glow-discharge plasma CVD system. The source gases were SiH4 and CH4. The amorphous film chemistry and composition were evaluated for a range of source gas mixtures and are compared with data obtained from a crystalline silicon carbide sample. The specific surface chemical bonds and bulk bonds were contrasted. In addition to the tetrahedral silicon-carbon bonds formed during film growth, a secondary species of carbon bond was found. This finding suggests that a form of non-tetrahedral carbon bonds is present in the as-grown amorphous silicon carbide material.
KeywordsSecondary Peak Amorphous Silicon Carbide High Binding Energy Peak Crystalline Silicon Carbide Bulk Bond
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