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X-Ray Photoelectron Spectroscopy Study of Hydrogenated Amorphous Silicon Carbide Films

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Amorphous and Crystalline Silicon Carbide II

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 43))

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Abstract

In order to investigate electronic and bonding structures in hydrogenated amorphous silicon carbide (a-SiC:H) films, an x-ray photoelectron spectroscopy (XPS) study was carried out. The films investigated were produced in an inductively-coupled glow-discharge plasma CVD system. The source gases were SiH4 and CH4. The amorphous film chemistry and composition were evaluated for a range of source gas mixtures and are compared with data obtained from a crystalline silicon carbide sample. The specific surface chemical bonds and bulk bonds were contrasted. In addition to the tetrahedral silicon-carbon bonds formed during film growth, a secondary species of carbon bond was found. This finding suggests that a form of non-tetrahedral carbon bonds is present in the as-grown amorphous silicon carbide material.

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References

  1. M.M. Rahman, S. Furukawa: Electronics Lett. 20 57 (1984)

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  2. K. Sasaki, S. Furukawa, M.M. Rahman: Tech. Dig. IEDM ’85, Washington D. C., 294 (1985)

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  3. S. Hofmann and J.H. Thomas III: J. Vac. Sci. Tech. B 1 (1), 43 (1983)

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Author information

Authors and Affiliations

  1. Microelectronics Laboratory, Santa Clara University, Santa Clara, CA, 95053, USA

    A. S. Byrne, M. Ju, T. Asano, M. M. Rahman & C. Y. Yang

  2. Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama, 227, Japan

    T. Asano

Authors
  1. A. S. Byrne
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  2. M. Ju
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  3. T. Asano
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  4. M. M. Rahman
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  5. C. Y. Yang
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Santa Clara University, Santa Clara, CA, 95053, USA

    Mahmud M. Rahman  & Cary Y.-W. Yang  & 

  2. Materials Science Research Center of Excellence, Howard University, 2300 6th Street N.W., Washington, DC, 20059, USA

    Gary L. Harris

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© 1989 Springer-Verlag Berlin, Heidelberg

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Byrne, A.S., Ju, M., Asano, T., Rahman, M.M., Yang, C.Y. (1989). X-Ray Photoelectron Spectroscopy Study of Hydrogenated Amorphous Silicon Carbide Films. In: Rahman, M.M., Yang, C.YW., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide II. Springer Proceedings in Physics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-75048-9_15

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  • DOI: https://doi.org/10.1007/978-3-642-75048-9_15

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-75050-2

  • Online ISBN: 978-3-642-75048-9

  • eBook Packages: Springer Book Archive

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