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Ballistic Electron Transport in Hot Electron Transistors

  • Chapter
Physics of Quantum Electron Devices

Part of the book series: Springer Series in Electronics and Photonics ((SSEP,volume 28))

Abstract

We review the history and the present impact of hot electron devices. We elaborate in particular on the tunnelling hot electron transfer amplifier (THETA) device. This device generates an almost monoenergetic, variable energy, hot electron beam (by tunnelling), which traverses a thin GaAs region to be eventually collected and energy analyzed. As the hot electrons traverse the device they are used to probe: scattering events, band nonparabolicity, size quantization effects, intervalley transfer, quantum mechanical reflections, and band discontinuities at interfaces.

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Authors
  1. M. Heiblum
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  2. M. V. Fischetti
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Editor information

Editors and Affiliations

  1. Quantum Phenomena and Device Research Department, AT&T Bell Laboratories, Room 7A-209, 600 Mountain Avenue, 07974, Murray Hill, NJ, USA

    Federico Capasso (Head) (Head)

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© 1990 Springer-Verlag Berlin Heidelberg

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Heiblum, M., Fischetti, M.V. (1990). Ballistic Electron Transport in Hot Electron Transistors. In: Capasso, F. (eds) Physics of Quantum Electron Devices. Springer Series in Electronics and Photonics, vol 28. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-74751-9_9

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  • DOI: https://doi.org/10.1007/978-3-642-74751-9_9

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-74753-3

  • Online ISBN: 978-3-642-74751-9

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