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Resonant Tunnelling and Superlattice Devices: Physics and Circuits

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Physics of Quantum Electron Devices

Part of the book series: Springer Series in Electronics and Photonics ((SSEP,volume 28))

Abstract

Resonant tunnelling (RT) through semiconductor double barriers (DB’s) was first demonstrated by Chang et al. [7.1] in 1974. With the development of modern crystal growth techniques, like molecular beam epitaxy (MBE), there has been renewed interest in the subject in recent years [7.2–23]. Material quality has improved to the point that negative differential resistance (NDR) can be observed at room temperature [7.2]. Intense research efforts are directed towards the optimization of the performances of the RT DB’s and their utilization as the building blocks of novel electronic and optical devices.

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  1. F. Capasso
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  2. S. Sen
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  3. F. Beltram
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  4. A. Y. Cho
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Editors and Affiliations

  1. Quantum Phenomena and Device Research Department, AT&T Bell Laboratories, Room 7A-209, 600 Mountain Avenue, 07974, Murray Hill, NJ, USA

    Federico Capasso (Head) (Head)

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Capasso, F., Sen, S., Beltram, F., Cho, A.Y. (1990). Resonant Tunnelling and Superlattice Devices: Physics and Circuits. In: Capasso, F. (eds) Physics of Quantum Electron Devices. Springer Series in Electronics and Photonics, vol 28. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-74751-9_7

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