Abstract
The concept of particles interacting coherently with finite multiple-barrier structures is over 35 years old, and yet it forms the basis for an area of intense activity today, both for practical devices and for studies of the underlying physics. An example is the two barrier structure shown in Fig. 6.1. In the quantum theory textbook written by Bohm [6.1] in 1951, the double-barrier problem was solved in the WKB approximation. He showed that, at certain energies, unity transmission resonances (resonant tunnelling) occur for particles incident upon the structure. Ten years elapsed before it was recognized that this phenomenon could be useful for devices. The first suggestion for a resonant-tunnelling transistor was made by Davis and Hosack [6.2] and Ioganson [6.3] in 1963, following the suggestion by Mead [6.4] in 1960 of a nonresonant double-barrier transistor. Early in the next decade Esaki and Tsu [6.5] pointed out that superlattices should show negative resistance, and Kazarinov and Suris [6.6] showed that negative resistance could arise from a finite superlattice. In 1973 Tsu and Esaki [6.7] derived the two-terminal current-voltage (I—V)curves for finite multiple-barrier structures using a wave function matching formulation based on a method of Kane [6.8]. This technique has been remarkably successful at explaining experimental results, as will be discussed in Sect. 6.7. In 1974 Chang et al. [6.9] were the first to observe resonant tunnelling in a mono-crystalline semiconductor. They used a two-barrier structure and observed the resonances in the current by measuring the I—V curve. A decade later, interest in the field was renewed when Sollner et al. [6.10] showed that the intrinsic charge transport mechanism of a two-barrier diode could respond to voltage changes in times of the order of 0.1 ps. More recently, the negative differential resistance characteristic of resonant tunnelling has been obtained at room temperature [6.11–13]. At present, several laboratories are actively investigating resonant-tunnelling devices.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
D. Bohm: Quantum Theory ( Prentice-Hall, Engelwood Cliffs, N.J. 1951 ) p. 283
R. H. Davis, H. H. Hosack: J. Appl. Phys. 34, 864 (1963)
L. V. Ioganson: Zh. Eksp. Teor. Fiz. 45, 207 (1963)
L. V. Ioganson: English transi. Soy. Phys.-JETP 18, 146, (1964)
C. A. Mead: J. Appl. Phys. 32, 646 (1961)
L. Esaki, R. Tsu: IBM J. Res. Develop. 14, 61 (1970)
R. F. Kazarinov, R. A. Suris: Soy. Phys. Semicond. 5, 707 (1971)
R. Tsu, L. Esaki: Appl. Phys. Lett. 22, 562 (1973)
E. O. Kane: “Basic Concepts of Tunnelling,” in Tunnelling Phenomena in Solids, ed. E. Burstein, S. Lundqvist ( Plenum, New York 1969 )
L. L. Chang, L. Esaki, R. Tsu: Appl. Phys. Lett. 24, 593 (1974)
T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald, C. D. Parker, D. D. Peck: Appl. Phys. Lett. 43, 588 (1983)
M. Tsuchiya, H. Sakaki: IEEE Int. Electron Devices Meeting, Washington DC, 1985 p. 662 6.12 T. J. Shewchuck, P. C. Chaplin, P. D. Coleman, W. Kopp, R. Fischer, H. Morkoc: Appl. Phys. Lett. 46, 508 (1985)
W. D. Goodhue, T. C. L. G. Sollner, H. Q. Le, E. R. Brown, B. A. Vojak: Appl. Phys. Lett. 49, 1086 (1986)
S. Muto, T. Inata, Y. Nataka, S. Hiyamizu: Int. Workshop on Future Electron Devices Superlattice Devices, Tokyo, Japan, Feb. 9–11, 1987, p. 33
A. R. Bonnefoi, R. T. Collins, T. C. Collins, T. C. McGill, R. D. Burnham, F. A. Ponce: Appl. Phys. Lett. 46, 285 (1985)
S. Ray, P. Ruden, V. Sokolov, R. Kolbas, T. Boonstra, J. Williams: Appl. Phys. Lett. 48, 1666 (1986)
S. Luryi: Appl. Phys. Lett. 47, 490 (1985)
J. Blatt, V. F. Weisskopf: Theoretical Nuclear Physics (Springer, Berlin, Heidelberg 1979 )
T. C. L. G. Sollner, E. R. Brown, W. D. Goodhue, H. Q. Le: Appl. Phys. Lett. 50, 332 (1987)
H. C. Torrey, C. A. Whitmer: Crystal Rectifiers, New York, 1948, p. 336
H. R. Fetterman, P. E. Tannenwald, B. J. Clifton, C. D. Parker, W. D. Fitzgerald, N. R. Erickson: Appl. Phys. Lett. 33, 151 (1978)
P. D. Coleman, S. Goedeke, T. J. Shewchuk, P. C. Chapin, J. M. Gering, H. Morkoc: Appl. Phys. Lett. 48, 422 (1986)
E. R. Brown, T. C. L. G. Sollner, W. D. Goodhue, C. D. Parker: Appl. Phys. Lett. 50, 83 (1987)
K. Kurokawa: Bell Syst. Tech. J. 48, 1937 (1969)
C. S. Kim, A. Brandli: IRE Trans. Circuit Theory CT8, 416 (1961)
R. F. Trambarulo: International Solid-State Circuits Conference, Philadelphia, PA, 1961
E. R. Brown, T. C. L. G. Sollner, W. D. Goodhue, C. D. Parker: Device Research Conference, Santa Barbara, CA, June 1987. Paper IVA-2
P. E. Davis, G. Gibbons: Solid State Electron. 10, 461 (1967)
D. T. Young, C. A. Burrus, R. C. Shaw: Proc. IEEE 52, 1260 (1964)
C. A. Burrus: J. Appl. Phys. 32, 1031 (1961)
D. Carlson, M. V. Schneider: IEEE Trans. Microwave Theory Tech. MTT-26, 706 (1978)
C. S. Kim: IRE Trans. Electron Dev. ED-8, 394 (1961)
A. R. Kerr: IEEE Trans. Microwave Theory Tech. MTT-23, 828 (1975)
E. R. Brown, T. C. L. G. Sollner, W. D. Goodhue: Solid Research Report, MIT Lincoln Laboratory 1986: 1, 37 (1986)
C. H. Page: Proc. IRE 46, 1738 (1958)
T. C. L. G. Sollner, E. R. Brown, W. D. Goodhue: Optical Soc. Am. Topical Meeting on Picosecond Electronics and Optoelectronics, Incline Village, NV, Jan 14–16, 1987, p. 143
T. L. Banis, I. V. Parshelyunas, Yu. K. Pozhela: Litov. Fiz. Sb. 11, 1013 (1971)
J. Pozhela: Plasma and Current Instabilities in Semiconductors, Intern. Ser. Sci. Solid State, 18 ( Pergamon, Oxford 1981 )
T. C. L. G. Sollner, H. Q. Le, C. A. Correa, W. D. Goodhue: Appl. Phys. Lett. 47, 36 (1985)
R. J. Nelson: Appl. Phys. Lett. 31, 351 (1977)
D. V. Lang, R. A. Logan, M. Jaros: Phys. Rev. B, 1015 (1979)
D. V. Lang, R. A. Logan: Inst. Phys. Conf. Ser. 43, 433 (1979)
B. Jogai, K. L. Wang: Appl. Phys. Lett. 46, 167 (1985)
A. R. Bonnefoi, D. H. Chow, T. C. McGill: Appl. Phys. Lett. 47, 888 (1985)
N. Yokoyama, K. Imamura, S. Muto, S. Hiyamizu, H. Nishii: Jpn. J. Appl. Phys. 24, L583 (1985)
F. Capasso, R. A. Kiehl: J. Appl. Phys. 58, 1366 (1985)
T. C. L. G. Sollner, H. Q. Le, C. A. Correa, W. D. Goodhue: IEEE/Cornell Conf. Advanced Concepts in High Speed Semicond. Devices and Circuits, Ithaca, NY, 1985, p. 252
W. Frensley: IEEE Int. Electron Devices Meeting, Washington, DC, 1986. Paper 25. 5
W. Frensley: Phys. Rev. B 36, 1570 (1987)
A. C. Gossard: Inst. Phys. Conf. Ser. 69, 1 (1984)
H. Q. Le, T. C. L. G. Sollner: unpublished
H. L. Berkowitz, R. A. Lux: Proc. Phys. Chem. Semicond. Interfaces XIV, Salt Lake City, UT (Jan. 1987). To be published in J. Vac. Sci. Technol.
S. Wingreen, J. W. Wilkins: Bull. Am. Phys. Soc. 32, 833 (1987)
V. J. Goldman, D. C. Tsui, J. E. Cunningham: Phys. Rev. Lett. 58, 1256 (1987)
T. C. L. G. Sollner: Phys. Rev. Lett. 59, 1622 (1987)
D. D. Coon, H. C. Liu: Appl. Phys. Lett. 47, 172 (1985)
B. Ricco, M. Ya. Azbel: Phys. Rev. B 29, 1970 (1984)
D. D. Coon, H. C. Liu: Appl. Phys. Lett. 49, 94 (1986)
L. V. Ioganson: Usp. Fiz. Nauk 86, 175 (1965)
L. V. Ioganson: Soy. Phys-Usp. 8, 413 (1965)
T. Weil, B. Vinter: Appl. Phys. Lett. 50, 1281 (1987)
F. Capasso: Surface. Sci. 142, 513 (1984)
T. Nakagawa, N. J. Kawai, K. Ohta: Superlattices and Microstructures 1, 187 (1985)
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1990 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Sollner, T.C.L.G., Brown, E.R., Goodhue, W.D., Le, H.Q. (1990). Microwave and Millimeter-Wave Resonant-Tunnelling Devices. In: Capasso, F. (eds) Physics of Quantum Electron Devices. Springer Series in Electronics and Photonics, vol 28. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-74751-9_6
Download citation
DOI: https://doi.org/10.1007/978-3-642-74751-9_6
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-74753-3
Online ISBN: 978-3-642-74751-9
eBook Packages: Springer Book Archive