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Energy Gap Measurement Made on Cryogenically Cleaved Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O Surfaces

  • J. S. Tsai
  • L. Takeuchi
  • J. Fujita
  • T. Yoshitake
  • S. Miura
  • S. Tanaka
  • T. Terashima
  • Y. Bando
  • K. Iijima
  • K. Yamamoto
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 11)

Abstract

The surfaces of the cryogenically cleaved Y-Ba-Cu-O film and Bi-Sr-Ca-Cu-O films are studied. Energy gaps are measured at these cleaved surfaces by the tunneling technique. (001), (103) and (110) oriented Y-Ba-Cu-O epitaxial films are broken in a cryogenic environment along the appropriate directions together with the SrTiO3 substrate. Pb electrode is brought close to the in situ clean broken film edge. The normalized energy gap 2Δ(0)/kBTc measured in the direction along and perpendicular to the Cu-O plane are found to be 6.0±0.2 and 3.6±0.2 respectively. These values are independent of the variation in the values of Tc within the examined range of 40K∼90K. The gap difference structure at ΔYBCOpb is observed which helps identifying the value of energy gap of the oxide superconductor unambiguously. (001) oriented epitaxial Bi-Sr-Ca-Cu-O films are also studied. The gap voltage along ab-plane is near 20 mV, but the gap opening temperature of Bi-Sr-Ca-Cu-O junction is not identified in the experiment.

Keywords

Tunnel Junction Oxide Superconductor Film Edge Josephson Frequency Junction Impedance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    T.K. Worthington, W.J. Gallagher and T.R. Dinger Phys. Rev. Lett. 59, 1160 (1987)ADSCrossRefGoogle Scholar
  2. 2.
    Y. Enomoto, T. Murakami, M. Suzuki and K. Moriwaki, Jpn. J. Appl. Phys. 26, L1248 (1987)ADSCrossRefGoogle Scholar
  3. 3.
    H. Ebisawa, Y. Isawa and S. Maekawa, Jpn. J. Appl. Phys. 26, L992, (1987)ADSCrossRefGoogle Scholar
  4. 4.
    J.R. Kirtley, W.J. Gallagher, Z. Schlesinger, R.L. Sandstrom, T.R. Dinger and D.A. Chance, 1987, preprint. Phys. Rev. B35, 8846 (1987)ADSGoogle Scholar
  5. 4.
    Z. Schlesinger, R.T. Collins, D.L. Kaiser, and F. Holtzberg, Phys. Rev. Lett. 59, 1958 (1987)ADSCrossRefGoogle Scholar
  6. 5.
    A. Barone, Physica C, 153–155, 1712 (1988)Google Scholar
  7. 6.
    J.S. Tsai, I. Takeuchi, J. Fujita, T. Yoshitake, S. Miura, S. Tanaka, T. Terashima, Y. Bando, K. Iijima, K. Yamamoto, Physica C 153–155, 1385 (1988)Google Scholar
  8. 7.
    J. Fujita, T. Yoshitake, A. Kamijyo, H. Igarashi and T. Satoh, to be published, Extended Abstracts MRS Spring Meeting (1988)Google Scholar
  9. 8.
    T. Terashima, K. Iijima, K. Yamamoto, Y. Bando and H. Mazaki, Jpn. J. Appl. Phys. 27, L91, (1988)ADSCrossRefGoogle Scholar
  10. 9.
    J. Fujita, T. Tatsumi, T. Yoshitake, H. Igarashi, To be published in Proceedings of Conference on the Science and Technology of Thin Film Superconductor Nov. 14–18, Colorado SpringsGoogle Scholar
  11. 10.
    S. Miura, unpublishedGoogle Scholar
  12. 11.
    J. Takada, H. Mazaki, T. Terashima, K. Iijima, K. Yamamoto, K. Hirata and Y. Bando, Extended Abstracts of the 20th Conference on Solid State Devices and Materials, Tokyo, 455 (1988)Google Scholar
  13. 12.
    G. Binnig and H.E. Hoenig, Z. Physik. B32, 23 (1978)ADSGoogle Scholar
  14. 13.
    G. Deutscher and K.A. Müller, Phys. Rev. Lett. 59, 1745 (1987)ADSCrossRefGoogle Scholar
  15. 14.
    S. Han, K.W. Ng, E.L. Wolf, A. Millis, J.L. Smith and Z. Fisk, Phys. Rev. Lett. 57, 238 (1986)ADSCrossRefGoogle Scholar
  16. 15.
    S. Zhao, H. Tao, Y. Chen, Y. Yan and Q. Yang, Solid State Communi. 67, 1179 (1988)CrossRefGoogle Scholar
  17. 16.
    M. Lee, A. Kapitulinik, M.R. Beasley, This proceedings.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1989

Authors and Affiliations

  • J. S. Tsai
    • 1
  • L. Takeuchi
    • 1
  • J. Fujita
    • 2
  • T. Yoshitake
    • 2
  • S. Miura
    • 2
  • S. Tanaka
    • 1
  • T. Terashima
    • 3
  • Y. Bando
    • 3
  • K. Iijima
    • 4
  • K. Yamamoto
    • 4
  1. 1.Microelectronics Research LaboratoriesNEC CorporationKawasaki 213Japan
  2. 2.Fundamental Research LaboratoriesNEC CorporationKawasaki 213Japan
  3. 3.Institute for Chemical ResearchKyoto UniversityUji 611Japan
  4. 4.Research Institute for Production DevelopmentKyoto 606Japan

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