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A Salicide Base Contact Technology (SCOT) for Use in High Speed Bipolar VLSI

  • Tadashi Hirao
  • Tatsuhiko Ikeda
  • Yoichi Kuramitsu
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 27)

Abstract

This chapter describes a new process technology called Salicide (self- aligned silicide) base COntact Technology (SCOT), that is applied for realizing high performance prescaler IC and high-gate-density master- slice LSI. The main feature of this process, for reduction of both the base resistance and the capacitance, is the silicidation of the base contact which is opened by employing self-alignment technology. A 1/128, 1/129 two-modulus prescaler IC comprised of 1.5 μm SCOT transistors has been improved to a high operation of 2.1 GHz at 56 mW power dissipation. An ECL 18K-gate masterslice has been developed by a Variable Size Cell (VSC) approach, employing the SCOT process.

Keywords

Power Dissipation Base Contact Gate Current Variable Size Cell Gate Speed 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • Tadashi Hirao
    • 1
  • Tatsuhiko Ikeda
    • 1
  • Yoichi Kuramitsu
    • 1
  1. 1.LSI Research and Development LaboratoryMitsubishi Electric CorporationItami, HyogoJapan

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