Abstract
This chapter gives a review of benefits and limiting aspects of the trench isolation techniques for bipolar devices. The most sophisticated trench isolation techniques have realized not only a high packing density but also reduced collector-substrate, wiring-substrate and base- collector parasitic capacitances. By using these techniques, high performance bipolar devices such as ultra-high-speed ECL RAMs, gate arrays and microprocessors have been fabricated. However, crystalline defects caused by trench structures continue to pose serious problems. Trench isolation techniques are still in the process of development, and it seems that there is no apparent limiting aspect unless the trench width exceeds the filler material width necessary to sustain enough breakdown voltage.
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Goto, H., Inayoshi, K. (1988). Trench Isolation Schemes for Bipolar Devices: Benefits and Limiting Aspects. In: Treitinger, L., Miura-Mattausch, M. (eds) Ultra-Fast Silicon Bipolar Technology. Springer Series in Electronics and Photonics, vol 27. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-74360-3_4
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DOI: https://doi.org/10.1007/978-3-642-74360-3_4
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