Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors
This chapter describes the newly developed technology which will break through the limitations for further scaling down of the base junction depth of a self-aligned bipolar transistor. The new technology, BSA (BSG Self-Aligned) technology, features the use of BSG film as a sidewall spacer between the emitter and base electrodes as well as the diffusion source for the intrinsic base and also for the p+-link region between the intrinsic and extrinsic base. BSA technology has been successfully combined with the RTA (Rapid Thermal Annealing) technique to fabricate sub-100nm base self-aligned bipolar transistors. The typical BSA transistor has hFE = 70, BVCEO = 7 V and BVEBO = 3 V. BSA technology is likely to prove extremely useful in future bipolar VLSIs.
KeywordsRapid Thermal Annealing Boron Concentration Junction Depth Shallow Base Intrinsic Base
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