Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors

  • Masahiko Nakamae
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 27)

Abstract

This chapter describes the newly developed technology which will break through the limitations for further scaling down of the base junction depth of a self-aligned bipolar transistor. The new technology, BSA (BSG Self-Aligned) technology, features the use of BSG film as a sidewall spacer between the emitter and base electrodes as well as the diffusion source for the intrinsic base and also for the p+-link region between the intrinsic and extrinsic base. BSA technology has been successfully combined with the RTA (Rapid Thermal Annealing) technique to fabricate sub-100nm base self-aligned bipolar transistors. The typical BSA transistor has hFE = 70, BVCEO = 7 V and BVEBO = 3 V. BSA technology is likely to prove extremely useful in future bipolar VLSIs.

Keywords

Migration Arsenic Boron Recrystallization Gallium 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • Masahiko Nakamae
    • 1
  1. 1.VLSI Development DivisionNEC CorporationSagamihara, Kanagawa 229Japan

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