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Complete Surface Structures

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Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 14))

Abstract

Our experience with surface structure determination by LEED intensity analysis has led us to the concept of complete surface structures. This concept is forced on us by the fact that a good fit to LEED data requires fixing all atom positions that deviate significantly from bulk positions. Hence many cases of deep structure, i.e., deviations extending several atomic layers below the top layer have been found. Especially studies of multilayer relaxation of open metallic surfaces1 have emphasized the need to specify many structural parameters, even on clean metallic crystals. In addition other experimental techniques have shown capability as deep probes, notably ion scattering2, and several theoretical approaches to relaxation in metals 3–6 have given insight into and consistent descriptions of multilayer relaxations which reinforce the experimental conclusions. Deep structure is also found in semiconductor surfaces, where the driving force is the formation of strained surface bonds, particularly angular strains, which in turn strain deeper layers to reduce the total strain energy7. Complete structure determinations on semiconductor surfaces have not been as successful as on metal surfaces, so we do not discuss semiconductors explicitly.

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References

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© 1988 Springer-Verlag Berlin Heidelberg

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Marcus, P.M., Jona, F. (1988). Complete Surface Structures. In: de Wette, F.W. (eds) Solvay Conference on Surface Science. Springer Series in Surface Sciences, vol 14. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-74218-7_6

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  • DOI: https://doi.org/10.1007/978-3-642-74218-7_6

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-74220-0

  • Online ISBN: 978-3-642-74218-7

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