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Solvay Conference on Surface Science pp 415–424Cite as

Surface Segregation at Metal/III-V Compound Semiconductor Interfaces

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Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 14))

Abstract

This paper focuses on the interesting observation that semiconductor atoms segregate to the free surface for many evolving metal/semiconductor interfaces. Their presence contributes to a range of intriguing properties of interfaces and their study offers insight into complicated interface behavior. The purpose of this paper is to develop a simple model for surface segregation for evolving metal/semiconductor interfaces. The starting point for this modeling is recent theories developed to qualitatively interpret grain-boundary segregation and surface segregation on alloy systems. As we will show, our approach will yield excellent agreement when compared with the wealth of experimental information available in the literature, including our own experimental results and those of others. We focus on interfaces grown under the cleanest of conditions. We do not summarize the large device literature because devices are grown under less controlled conditions and the presence of impurities will alter the atom distribution.

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Author information

Author notes

  1. Zhangda Lin

    Present address: Institute of Physics, Chinese Academy of Science, Beijing, People’s Republic of China

Authors and Affiliations

  1. Department of Chemical Engineering and Materials Science, University of Minnesota, 55455, Minneapolis, MN, USA

    Zhangda Lin, F. Xu & J. H. Weaver

Authors
  1. Zhangda Lin
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  2. F. Xu
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  3. J. H. Weaver
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Editor information

Editors and Affiliations

  1. Department of Physics, University of Texas at Austin, 78712, Austin, TX, USA

    Frederik W. de Wette

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© 1988 Springer-Verlag Berlin Heidelberg

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Lin, Z., Xu, F., Weaver, J.H. (1988). Surface Segregation at Metal/III-V Compound Semiconductor Interfaces. In: de Wette, F.W. (eds) Solvay Conference on Surface Science. Springer Series in Surface Sciences, vol 14. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-74218-7_37

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  • DOI: https://doi.org/10.1007/978-3-642-74218-7_37

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-74220-0

  • Online ISBN: 978-3-642-74218-7

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