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PSID SEXAFS Studies of Silicon Surface Chemistry

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Part of the book series: Springer Series in ((SSSUR,volume 13))

Abstract

Photon stimulated ion desorption (PSID) surface EXAFS (SEXAFS) showed early promise, being successfully applied to the Mo(100)/0 system [1]. The technique offers a means to determine the coordination geometry of a substrate atom to which the desorbed adsorbate ion was bonded. Information regarding the adsorbate coordination geometry can also be obtained, although electron and fluorescence yield techniques can usually be used for this purpose if a majority surface species is the subject of interest. The surface specific nature of the PSID yield is unique amongst probes of the surface absorption coefficient. This conveys the possibility of using PSID SEXAFS to determine the coordination geometry about a substrate atom bonded to hydrogen or, for instance, the bond geometry of -OH on an oxide surface. In addition, the bond geometry of minority surface species can be probed, as in the Mo(100)/0 study. Clearly, PSID SEXAFS is potentially a very powerful tool in surface structure determination.

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© 1988 Springer-Verlag Berlin Heidelberg

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Thornton, G., Warburton, D.R., McGrath, R., McGovern, I.T., Norman, D. (1988). PSID SEXAFS Studies of Silicon Surface Chemistry. In: Stulen, R.H., Knotek, M.L. (eds) Desorption Induced by Electronic Transitions DIET III. Springer Series in Surface Sciences , vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-73728-2_28

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  • DOI: https://doi.org/10.1007/978-3-642-73728-2_28

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-73730-5

  • Online ISBN: 978-3-642-73728-2

  • eBook Packages: Springer Book Archive

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